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3N170 Overview

3N170

3N170 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Code_compli
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.8 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

3N170 Related Products

3N170 3N164 M116 AA0201DR-071M
Description 3N170 3N164 M116 ANTI-SULFURATED CHIP RESISTORS AUTOMOTIVE GRADE
Is it Rohs certified? incompatible incompatible incompatible -
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation -
Reach Compliance Code _compli not_compliant not_compliant -
Configuration Single Single Single -
Maximum drain current (Abs) (ID) 0.03 A 0.05 A 0.05 A -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JESD-609 code e0 e0 e0 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 200 °C 200 °C 150 °C -
Polarity/channel type N-CHANNEL P-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 0.8 W 0.375 W 0.3 W -
surface mount NO NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
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