DRAM MODULE
KMM364C80(8)3CK/CS Fast Page Mode
8M x 64 DRAM DIMM Using 8Mx8, 4K & 8K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM364C80(8)3C is a 8Mx64bits Dynamic
RAM high density memory module. The Samsung
KMM364C80(8)3C consists of eight CMOS 8Mx8bits DRAMs
in SOJ/TSOP-II 400mil packages and two 16 bits driver IC in
TSSOP package mounted on a 168-pin glass-epoxy sub-
strate. A 0.1 or 0.22uF decoupling capacitor is mounted on
the printed circuit board for each DRAM. The
KMM364C80(8)3C is a Dual In-line Memory Module and is
intended for mounting into 168 pin edge connector sockets.
KMM364C80(8)3CK/CS
FEATURES
• Part Identification
Part number
KMM364C803CK
KMM364C803CS
KMM364C883CK
KMM364C883CS
•
•
•
•
•
•
•
•
PKG
SOJ
TSOP
SOJ
TSOP
8K
4K/64ms
8K/64ms
Ref.
4K
CBR Ref.
ROR Ref.
4K/64ms
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
18ns
20ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Fast Page Mode Operation
CAS-before-RAS Refresh capability
RAS-only and Hidden refresh capability
TTL compatible inputs and outputs
Single 5V±10% power supply
JEDEC standard pinout & Buffered PDpin
Buffered input except RAS and DQ
PCB : Height(1250mil), single sided component
PIN CONFIGURATIONS
Pin Front Pin Front Pin Front Pin
V
SS
1
29
2
DQ0 30
DQ1 31
3
4
DQ2 32
DQ3 33
5
V
CC
6
34
DQ4 35
7
DQ5 36
8
DQ6 37
9
10 DQ7 38
11 *DQ8 39
V
SS
12
40
13 DQ9 41
14 DQ10 42
15 DQ11 43
16 DQ12 44
17 DQ13 45
V
CC
18
46
19 DQ14 47
20 DQ15 48
21 DQ16 49
22 *DQ17 50
V
SS
23
51
24 RSVD 52
25 RSVD 53
26
V
CC
54
W0
27
55
28 CAS0 56
CAS2
RAS0
OE0
V
SS
A0
A2
A4
A6
A8
A10
A12
V
CC
RFU
RFU
V
SS
OE2
RAS2
CAS4
CAS6
W2
V
CC
RSVD
RSVD
DQ18
DQ19
V
SS
DQ20
DQ21
Back
Pin
Back
Pin Back
DQ58
DQ59
V
CC
DQ60
RFU
RFU
RFU
RFU
DQ61
*DQ62
DQ63
V
SS
DQ64
DQ65
DQ66
DQ67
V
CC
DQ68
DQ69
DQ70
*DQ71
V
SS
PD2
PD4
PD6
PD8
ID1
V
CC
57 DQ22 85
V
SS
113 CAS3 141
58 DQ23 86 DQ36 114 *RAS1 142
59
87 DQ37 115 RFU 143
V
CC
60 DQ24 88 DQ38 116 V
SS
144
61 RFU 89 DQ39 117
A1
145
62 RFU 90
V
CC
118
146
A3
63 RFU 91 DQ40 119
A5
147
64 RFU 92 DQ41 120
148
A7
65 DQ25 93 DQ42 121
A9
149
66 *DQ26 94 DQ43 122 A11 150
67 DQ27 95 *DQ44 123 *A13 151
68
V
SS
124 V
CC
152
V
SS
96
69 DQ28 97 DQ45 125 RFU 153
70 DQ29 98 DQ46 126
154
B0
71 DQ30 99 DQ47 127 V
SS
155
72 DQ31 100 DQ48 128 RFU 156
73
V
CC
101 DQ49 129 *RAS3 157
74 DQ32 102 V
CC
130 CAS5 158
75 DQ33 103 DQ50 131 CAS7 159
76 DQ34 104 DQ51 132 PDE 160
77 *DQ35 105 DQ52 133 V
CC
161
78
V
SS
106 *DQ53 134 RSVD 162
79
PD1 107 V
SS
135 RSVD 163
80
PD3 108 RSVD 136 DQ54 164
81
PD5 109 RSVD 137 DQ55 165
82
PD7 110 V
CC
138 V
SS
166
83
ID0 111 RFU 139 DQ56 167
84
V
CC
112 CAS1 140 DQ57 168
PIN NAMES
Pin Names
A0, B0, A1 - A11
A0, B0, A1 - A12
DQ0 - DQ71
W0, W2
OE0, OE2
RAS0, RAS2
CAS0 - CAS7
V
CC
V
SS
NC
PDE
PD1 - 8
ID0 - 1
RSVD
RFU
Function
Address Input(4K ref.)
Address Input(8K ref.)
Data In/Out
Read/Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power(+5V)
Ground
No Connection
Presence Detect Enable
Presence Detect
ID bit
Reserved Use
Reserved for Future Use
Pins marked
′
*
′
are not used in this module.
PD & ID Table
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
ID0
ID1
50NS
1
0
1
1
0
0
0
1
0
0
60NS
1
0
1
1
0
1
1
1
0
0
NOTE : A12 is used for only KMM364C880CK/CS (8K Ref.)
PD Note :PD & ID Terminals must each be pulled up through a resistor to V
CC
at the next higher
level assembly. PDs will be either open (NC) or driven to V
SS
via on-board buffer circuits.
PD : 0 for Vol of Drive IC & 1 for N.C
ID Note : IDs will be either open (NC) or connected directly to V
SS
without a buffer.
ID : 0 for Vss & 1 for N.C
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
KMM364C80(8)3CK/CS
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
8
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC*1
0.8
Unit
V
V
V
V
*1 : V
CC
+2.0V at pulse width≤20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width≤20ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM364C803CK/CS
Min
-
-
KMM364C883CK/CS
Min
-
-
-
-
-
-
-
-
-
-
-10
-5
2.4
-
Max
720
640
100
720
640
480
400
30
720
640
10
5
-
0.4
Max
960
880
100
960
880
560
480
30
960
880
10
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-10
-5
2.4
-
I
CC1
* : Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
* : Fast Page Mode Current * (RAS=V
IL
, CAS cycling :
t
PC
=min)
I
CC5
: Standby Current (RAS=CAS=W=Vcc-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I(
IL)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.5V,
all other pins not under test=0 V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
V
OH
: Output High Voltage Level (I
OH
= -5mA)
V
OL
: Output Low Voltage Level (I
OL
= 4.2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Fast page mode cycle time,
t
PC
.