MD18R326GAG0-CN1 datasheet, PDF

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MD18R326GAG0-CN1: DescriptionRambus DRAM Module, 256MX36, 32ns, CMOS, RIMM-232; Categorystorage storage; File Size254KB，16 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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MD18R326GAG0-CN1 Overview

Rambus DRAM Module, 256MX36, 32ns, CMOS, RIMM-232

MD18R326GAG0-CN1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	DMA
package instruction	DIMM, DIMM232,40
Contacts	232
Reach Compliance Code	compli
ECCN code	EAR99
access mode	BLOCK ORIENTED PROTOCOL
Maximum access time	32 ns
Other features	SELF CONTAINED REFRESH
Maximum clock frequency (fCLK)	600 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N232
memory density	9663676416 bi
Memory IC Type	RAMBUS DRAM MODULE
memory width	36
Number of functions	1
Number of ports	1
Number of terminals	232
word count	268435456 words
character code	256000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256MX36
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM232,40
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
refresh cycle	32768
self refresh	YES
Maximum standby current	1.976 A
Maximum slew rate	4.27 mA
Maximum supply voltage (Vsup)	2.63 V
Minimum supply voltage (Vsup)	2.37 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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MD18R3268(G)AG0

Change History

Version 0.1 (Sept. 2003)-

Preliminary

* First copy.

* Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM



Module Datasheet

Version 1.0 (Feb. 2004)

* Eliminate “Preliminary”

Version 1.0 Feb. 2004

MD18R326GAG0-CN1 Related Products

	MD18R326GAG0-CN1	MD18R3268AG0-CM8	MD18R326GAG0-CT9	MD18R3268AG0-CT9	MD18R3268AG0-CN1	MD18R326GAG0-CM8
Description	Rambus DRAM Module, 256MX36, 32ns, CMOS, RIMM-232	Rambus DRAM Module, 128MX36, 40ns, CMOS, RIMM-232	Rambus DRAM Module, 256MX36, 32ns, CMOS, RIMM-232	Rambus DRAM Module, 128MX36, 32ns, CMOS, RIMM-232	Rambus DRAM Module, 128MX36, 32ns, CMOS, RIMM-232	Rambus DRAM Module, 256MX36, 40ns, CMOS, RIMM-232
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	DMA	DMA	DMA	DMA	DMA	DMA
package instruction	DIMM, DIMM232,40	DIMM, DIMM232,40	DIMM, DIMM232,40	DIMM, DIMM232,40	DIMM, DIMM232,40	DIMM, DIMM232,40
Contacts	232	232	232	232	232	232
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL
Maximum access time	32 ns	40 ns	32 ns	32 ns	32 ns	40 ns
Other features	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH
Maximum clock frequency (fCLK)	600 MHz	400 MHz	533 MHz	533 MHz	600 MHz	400 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N232	R-XDMA-N232	R-XDMA-N232	R-XDMA-N232	R-XDMA-N232	R-XDMA-N232
memory density	9663676416 bi	4831838208 bit	9663676416 bit	4831838208 bit	4831838208 bit	9663676416 bit
Memory IC Type	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE
memory width	36	36	36	36	36	36
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	232	232	232	232	232	232
word count	268435456 words	134217728 words	268435456 words	134217728 words	134217728 words	268435456 words
character code	256000000	128000000	256000000	128000000	128000000	256000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256MX36	128MX36	256MX36	128MX36	128MX36	256MX36
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM232,40	DIMM232,40	DIMM232,40	DIMM232,40	DIMM232,40	DIMM232,40
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	32768	32768	32768	32768	32768	32768
self refresh	YES	YES	YES	YES	YES	YES
Maximum standby current	1.976 A	1.464 A	1.856 A	1.824 A	1.944 A	1.496 A
Maximum slew rate	4.27 mA	2.27 mA	4.1 mA	2.82 mA	2.95 mA	3.35 mA
Maximum supply voltage (Vsup)	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V
Minimum supply voltage (Vsup)	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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