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2SC4134STL

Description
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size106KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC4134STL Overview

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN

2SC4134STL Parametric

Parameter NameAttribute value
MakerSANYO
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Ordering number:ENN2510A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1592/2SC4134
High-Voltage Switching Applications
Applications
· Power supplies, relay drivers, lamp drivers.
Package Dimensions
unit:mm
2045B
[2SA1592/2SC4134]
6.5
5.0
4
Features
· Adoption FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching speed.
· Small and slim package permitting 2SA1592/
2SC4134-applied sets to be made more compact.
0.85
0.7
1.5
2.3
0.5
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1592/2SC4134]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/5

2SC4134STL Related Products

2SC4134STL 2SC4134RTL 2SA1592STL 2SA1592TTL 2SA1592TL 2SC4134S 2SA1592RTL 2SC4134TL 2SC4134TTL
Description Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Transistor, Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 , IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknow unknow unknow unknow unknow unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 100 140 200 100 140 100 100 200
Number of components 1 1 1 1 1 1 1 1 1
Polarity/channel type NPN NPN PNP PNP PNP NPN PNP NPN NPN
surface mount NO NO NO NO NO YES NO NO NO
Contacts 3 3 3 3 3 - 3 3 3
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR - COLLECTOR COLLECTOR COLLECTOR
Collector-emitter maximum voltage 100 V 100 V 100 V 100 V 100 V - 100 V 100 V 100 V
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 - R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of terminals 3 3 3 3 3 - 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE - IN-LINE IN-LINE IN-LINE
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz - 120 MHz 120 MHz 120 MHz
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