SCF2N6901T2 datasheet, PDF - EEWORLD Datasheet

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SCF2N6901T2: DescriptionPower Field-Effect Transistor, 1.69A I(D), 100V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size594KB，3 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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SCF2N6901T2 Overview

Power Field-Effect Transistor, 1.69A I(D), 100V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

SCF2N6901T2 Parametric

Parameter Name	Attribute value
Maker	Semicoa
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	1.69 A
Maximum drain-source on-resistance	2.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	5 A
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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SCF2N6901T2

JANTX2N6901

JANTXV2N6901

LOGIC LEVEL POWER MOSFET

FOR RUGGED ENVIRONMENTS

DESCRIPTION

TO-205AF / TO-39

REF: MIL-PRF-19500/570



N-Channel



100 Volt



< 1.4 Ohm



1.69 Amp

SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabil-

ity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

used for ground based telecommunications, vehicles, ships, weapon systems and other application where fail-

ure is not an option.

FEATURES



Available in JANTX and JANTXV equivalent levels

RDS

(ON)

< 1.4 Ω

Logic Level for simple Drive Requirements

Low Gate Charge for Fast Switching



Ease of Paralleling

Hermetically Sealed

Die Available

ABSOLUTE MAXIMUM RATINGS

PARAMETER

l

D

@ V

GS

= 10 V, T

C

= 25° C

l

D

@ V

GS

= 10 V, T

C

= 100° C

IDM

PD @ TC = 25° C

Continuous Drain Current

Pulsed Drain Current

(1)

Max Power Dissipation

Linear Derating Factor

VGS

TJ

TSTG

Gate to Source Voltage

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

1.69

1.07

5.0

8.33

0.067

±10

-55 to 150

300

0.98 typical

W

W/°C

V

°C

g

A

UNITS

For footnotes refer to the last page

333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900

www.semicoa.com

sales@semicoa.com

MDS6901

REV. NEW

PAGE 1

SCF2N6901T2 Related Products

	SCF2N6901T2	320620010	JANTXV2N6901
Description	Power Field-Effect Transistor, 1.69A I(D), 100V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Induktive Sensoren	Power Field-Effect Transistor, 1.69A I(D), 100V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Maker	Semicoa	-	Semicoa
package instruction	CYLINDRICAL, O-MBCY-W3	-	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	-	unknown
ECCN code	EAR99	-	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	-	100 V
Maximum drain current (ID)	1.69 A	-	1.69 A
Maximum drain-source on-resistance	2.6 Ω	-	2.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	-	TO-205AF
JESD-30 code	O-MBCY-W3	-	O-MBCY-W3
Number of components	1	-	1
Number of terminals	3	-	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Package body material	METAL	-	METAL
Package shape	ROUND	-	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Maximum pulsed drain current (IDM)	5 A	-	5 A
surface mount	NO	-	NO
Terminal form	WIRE	-	WIRE
Terminal location	BOTTOM	-	BOTTOM
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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