SEMICONDUCTOR
1PT Series
Sensitive gate SCRs, 1A
RoHS
RoHS
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
1
600 to 800
40 to
2
00
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the 1PT
series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
ignitions, motor control in kitchen aids, overvoltage
crowbar protection in low power supplies among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
A2
A1
G
2
(A2)
TO-92
(1PTxxE)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Forward peak gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
T
c
=85ºC
VALUE
1
UNIT
A
I
T(AV)
F =50 Hz
F =60 Hz
T
c
=85ºC
t = 20 ms
t = 16.7 ms
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
j
= 110ºC
T
j
= 110ºC
0.6
12
13
0.72
50
0.5
0.5
0.1
600 and 800
- 40 to + 150
A
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
A
A
2
s
A/µs
A
W
W
V
T
A
=25
°
C, Pulse width≤0.1 µs
T
j
=110ºC
T
j
=25ºC
ºC
- 40 to + 110
www.nellsemi.com
Page 1 of 6
SEMICONDUCTOR
1PT Series
RoHS
RoHS
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 100
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V to
Rd
V
D
= V
DRM
, R
L
= 3.3K
R
GK
= 1K , T
j
= 110°C
I
T
= 50mA, R
GK
= 1K
I
G
= 1mA, R
GK
= 1K
(T
J
= 25
ºC unless otherwise specified
)
1PTxxxx
Min.
Max.
Max.
Min.
Max.
Min.
Min.
T
j
= 25°C
T
j
= 25°C
T
j
= 110°C
T
j
= 110°C
T
j
= 110°C
Max.
Max.
Max.
Max.
Max.
10
200
0.8
0.2
5
6
10
1.6
5
0.1
0.85
60
Unit
TEST CONDITIONS
µA
V
V
mA
mA
V/µs
V
µA
mA
V
M
V
D
= 67% V
DRM
, R
GK
= 1K , T
j
= 110°C
I
T
= 1A, t
P
= 380 µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220
Threshold voltage
Dynamic resistance
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient (DC)
Parameter
TO-92
TO-92
VALUE
75
150
UNIT
°C/W
°C/W
PRODUCT SELECTOR
VOLTAGE
(
x x
)
PART NUMBER
600
V
1PTxxE03
1PTxxE-05
1PTxxE-06
1PTxxE-08
1PTxxE-S
V
V
V
V
V
800
V
V
V
V
V
V
10~30
µ
A
20~50
µ
A
30~60
µ
A
50~80
µ
A
70~200
µ
A
TO-92
TO-92
TO-92
TO-92
TO-92
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
1PTxxE-yy
Note:
xx = voltage, y = sensitivity
MARKING
1PTxxE-yy
PACKAGE
TO-92
WEIGHT
0.23g
,
BASE Q TY
500
DELIVERY MODE
Bag
www.nellsemi.com
Page 2 of 6
SEMICONDUCTOR
1PT Series
RoHS
RoHS
ORDERING INFORMATION SCHEME
1 PT 06
Current
1 = 1A, I
T(RMS)
E
-
T
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
E = TO-92
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Fig.1 Maximum power dissipation versus RMS
on-state current (full cycle)
P(W)
5
1.0
4
0.8
3
2
1
0
0
0.2
0.4
I
T(RMS)
(A)
Fig.2 RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
0.6
0.4
0.2
0
0.6
0.8
1.0
0
25
50
T
C
(°C)
75
100
125
Fig.3 On-state characteristics (maximum values)
I
TM
(A), I²t(A²s)
Tjmax
Vto=0.85V
Rd=60mΩ
Fig.4 Surge peak on-state current versus number
of cycles
I
TSM
(A)
t=10ms
Half cycle
10
20
18
16
12
10
1.0
Tj=Tjmax
Tj=25°C
8
6
4
2
2.0
2.5
0
Non repetltlve
Tj lntla=25
°
C
0.1
0
0.5
1.0
V
TM
(V)
1.5
Number of cycles
1
10
100
1000
www.nellsemi.com
Page 3 of 6
SEMICONDUCTOR
1PT Series
RoHS
RoHS
Fig.5 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms,
and corresponding value of l²t
100
l TSM (A), I²t (A²s)
Tj lntlal=25
°
C
Fig.6 Relative variation of gate trigger current,
holding current and latching current
versus junction temperature (typical values)
6.0
5.0
IGT,IH,IL[T]/IGT,IH,IL[T]=25°C
dl/dt≤50 A / S
4.0
I
TSM
l
GT
10
3.0
2.0
t=10ms
Half cycle
IH&IL
Tj(
°
C)
1.0
1
0.01
0.1
1.0
10.0
0.0
-40
-20
0
20
40
60
80
100
120
140
Case Style
TO-92
Ø
RoHS
5.20(0.205)
4.45(0.175)
5.33(0.210)
4.58(0.180)
1
2
3
0.50(0.020)
0.40(0.016)
12.70(0.500)Min.
0.50(0.020)
0.40(0.016)
0.50(0.020)
0.40(0.016)
1.40(0.055)
1.14(0.045)
1.40(0.055)
1.14(0.045)
4.20(0.165)
3.20(0.126)
www.nellsemi.com
Page 4 of 6
京公网安备 11010802033920号
EEWORLD
