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HY5117800BLJ-80

Description
EDO DRAM, 2MX8, 80ns, CMOS, 0.300 INCH, SOJ
Categorystorage    storage   
File Size62KB,1 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY5117800BLJ-80 Overview

EDO DRAM, 2MX8, 80ns, CMOS, 0.300 INCH, SOJ

HY5117800BLJ-80 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeSOJ
package instructionSOJ,
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
JESD-30 codeR-PDSO-J
memory density16777216 bi
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle2048
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Terminal formJ BEND
Terminal locationDUAL

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