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HYMP31GP72CUP4M-C5

Description
DDR DRAM Module, 1GX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240
Categorystorage    storage   
File Size250KB,32 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
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HYMP31GP72CUP4M-C5 Overview

DDR DRAM Module, 1GX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240

HYMP31GP72CUP4M-C5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSK Hynix
Parts packaging codeDIMM
package instructionDIMM, DIMM240,40
Contacts240
Reach Compliance Codeunknow
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
Maximum clock frequency (fCLK)266 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N240
length133.35 mm
memory density77309411328 bi
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals240
word count1073741824 words
character code1000000000
Operating modeSYNCHRONOUS
Maximum operating temperature55 °C
Minimum operating temperature
organize1GX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM240,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height30 mm
self refreshYES
Maximum standby current1.747 A
Maximum slew rate5.96 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width7.55 mm
240pin DDR2 MetaSDRAM Registered DIMM based on 1Gb version C
This Hynix 8GB DDR2 MetaSDRAM Registered DIMM contains standard Hynix C-version 1Gb DDR2
SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. The module is capable
of operating at PC2-4200(DDR2-533) data rate.
The MetaRAM 8GB DDR2 SDRAM module operates in registered mode, where the address and command
inputs clocked into register chips on the rising edge of the clock signal. The registered mode adds a one
clock cycle delay to all the commands. A phase-lock loop (PLL) chip on the module receives the differential
clock signal from the motherboard and re-drives multiple copies to the register adn buffer chips on the
module. The register and PLL chips minimize the loading on the address, control, and clock lines on the
motherboard. The PLL used on the MetaRAM 8GB R-DIMM is fully compliant with the JEDEC specications.
The MetaRAM 8GB R-DIMM also has an on-board SPD EEPROM. The SPD chip contains 256byte, the first
128 of which are used by the module vendors to specify information like module type, DRAM organization,
DRAM timing, and module manufacturer. The last 128 bytes are not programmed, and may be used the
customer. The SPD chip may be read via a standard I2C bus using the SCL, SDA, and SA[2:O] signals. The
write protect (WP) pin is tied to ground on the module to enable writes to the SPD.
The MetaRAM 8GB RDIMM features WakeOneUse power saving technology capable of lowering the power
consumption of the modules under all workloads. The modules support additive latency (AL). WakeOnUse
is disabled when additive latency is enabled.
The 8GB MetaSDRAM RDIMM also provides higher sustained bandwidth than a standard RDIMM. The
modules are designed with no tFAW restriction (i.e. tFAW = 4 * tRRD). In addition, the MetaSDRAM
RDIMM provides 0-cycle turnaround for reads to the two ranks of the DIMM. That is, the memory control-
ler can schedule a read to one rank of a DIMM followed immediately (i.e. with 0-cycle gap or delay) by a
read to the other rank of the same DIMM. Similarly, the MetaSDRAM RDIMM provides 0-cycle turnaround
for writes to the two ranks of the DIMM. Since tFAW and intra-DIMM rank-rank turnaround time are not
part of the DDR2 SPD specification, BIOS must recognize the MetaSDRAM RDIMM at boot time and
explicitly configure the memory controller to take advantage of the tFAW and 0-cycle rank-rank
turnaround capabilities of the MetaSDRAM RDIMM. Please refer to the SPD application note on how BIOS
may recognize a Hynix’s MetaSDRAM RDIMM.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2 / Sep. 2008
1

HYMP31GP72CUP4M-C5 Related Products

HYMP31GP72CUP4M-C5 HYMP31GP72CUP4-C6
Description DDR DRAM Module, 1GX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240 DDR DRAM Module, 1GX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240
Is it Rohs certified? conform to conform to
Maker SK Hynix SK Hynix
Parts packaging code DIMM DIMM
package instruction DIMM, DIMM240,40 DIMM, DIMM240,40
Contacts 240 240
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 0.5 ns 0.5 ns
Other features AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
Maximum clock frequency (fCLK) 266 MHz 266 MHz
I/O type COMMON COMMON
JESD-30 code R-XDMA-N240 R-XDMA-N240
length 133.35 mm 133.35 mm
memory density 77309411328 bi 77309411328 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
memory width 72 72
Number of functions 1 1
Number of ports 1 1
Number of terminals 240 240
word count 1073741824 words 1073741824 words
character code 1000000000 1000000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 55 °C 55 °C
organize 1GX72 1GX72
Output characteristics 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Encapsulate equivalent code DIMM240,40 DIMM240,40
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 260 260
power supply 1.8 V 1.8 V
Certification status Not Qualified Not Qualified
refresh cycle 8192 8192
Maximum seat height 30 mm 30 mm
self refresh YES YES
Maximum standby current 1.747 A 1.747 A
Maximum slew rate 5.96 mA 5.96 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal pitch 1 mm 1 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 20 20
width 7.55 mm 7.55 mm
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