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20T10AI-CW

Description
TRIACs, 20A Sunbberless
File Size1MB,5 Pages
ManufacturerNell
Websitehttps://www.nellsemi.com
Download Datasheet View All

20T10AI-CW Overview

TRIACs, 20A Sunbberless

SEMICONDUCTOR
RoHS
20T Series
RoHS
TRIACs, 20A
Sunbberless
FEATURES
Medium current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
Clip assembly
20T series are
UL
certified (File ref: E320098)
Packages are RoHS compliant
A1
A2
G
1
2
3
A2
TO-220AB
(non-Insulated)
(20TxxA)
TO-220AB
(lnsulated)
(20TxxAI)
APPLICATIONS
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
phase control and static switching on inductive or
resistive load.
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
By using an internal ceramic pad, the 20T series
provides voltage insulated tab (rated at 2500V
RMS
)
complying with UL standards.
A2
A1 A2
G
1
2
G
TO-3P
(non-Insulated)
(20TxxB)
TO-3P
(Insulated)
(20TxxBI)
MAIN FEATURES
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
A2
VALUE
20
600 to 1000
35 to 50
UNIT
A
V
mA
A1 A2
G
TO-263
(D
2
PAK)
(20TxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Peak gate power dissipation (tp = 20µs)
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-263/TO-220AB/TO-3P
T
c
= 90ºC
20
TO-220AB insulated/TO-3P insulated T
c
= 70ºC
F =50 Hz
F =60 Hz
I t
dI/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
VALUE
UNIT
A
I
TSM
t = 20 ms
t = 16.7 ms
200
210
200
A
A
2
s
A/µs
A
W
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
50
4
10
1
- 40
to
+ 150
ºC
- 40
to
+ 125
www.nellsemi.com
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