BZX384C Series
FEATURES :
* Silicon Planar Power Zener Diodes
* The Zener voltages are graded according
to the internation E 24 standard.
* Standard Zener voltage tolerance is ± 5 %.
Replace "C" with "B" for ± 2 % tolerance.
* Pb / RoHS Free
ZENER DIODES
SOD-323
1.80
1.60
1.35
1.15
MECHANICAL DATA
* Case : SOD-323 Plastic Package
* Weight : 0.004 gram
2.80
2.30
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics
(Ta
Parameter
Zener Current
Power Dissipation at T
amp
= 25 °C
Thermal Resistance
Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Notes:
(1) Device on fiberglass substrate
(2) Valid provided that electrodes are ambient temperature
25
°
C unless otherwise noted)
Symbol
I
ZM
P
tot
R
өJA
T
J
T
S
Value
250
200
(1)
650
(2)
150
-65 to + 150
0.15 (max)
1.10
0.80
0.40
0.25
Unit
mA
Mw
°C/W
°C
°C
Page 1 of 2
Rev. 02 : March 24, 2006
ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified
Zener Voltage Dynamic
Type
Marking
Temp.Coefficient of
Test
Current
I
ZT1
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Dynamic
Resistance
at I
ZT2
r
zj
(Ω)
275
300 (≤600 )
325 (≤600 )
350 (≤600 )
375 (≤600 )
400 (≤600 )
410 (≤600 )
425 (≤500 )
400 (≤480 )
80 (≤400 )
40 (≤150 )
30 (≤80 )
30 (≤80 )
40 (≤80 )
40 (≤100 )
50 (≤150 )
50 (≤150 )
50 (≤150 )
50 (≤170 )
50 (≤200 )
50 (≤200 )
50 (≤225 )
60 (≤225 )
60 (≤250 )
60 (≤250 )
65 (≤300 )
70 (≤300 )
75 (≤325 )
80 (≤350 )
80 (≤350 )
85 (≤375 )
85 (≤375 )
85 (≤400 )
100 (≤425 )
100 (≤450)
150 (≤475 )
170 (≤500 )
Reverse Leakage
Test
Current
I
ZT2
(mA) I
R
(μA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50.0
20.0
10.0
5.00
5.00
3.00
3.00
3.00
2.00
1.00
3.00
2.00
1.00
0.70
0.50
0.20
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
rang
(1)
at I
ZT1
Resistance Zener voltage at I
ZT1
V
Z
(V)
min
max
2.60
2.90
3.20
3.50
3.80
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
Current
at
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
0.7 Vznom.
at I
ZT1
r
zj
(Ω)
70 (≤100 )
75 (≤100)
80 (≤95)
85 (≤95)
85 (≤90)
85 (≤90)
80 (≤90)
50 (≤80)
40 (≤60)
15 (≤40)
6.0 (≤10)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
8.0 (≤20)
10 (≤20)
10 (≤25)
10 (≤30)
10 (≤30)
10 (≤40)
10 (≤45)
15 (≤55)
20 (≤55)
25 (≤70)
25 (≤80)
30 (≤80)
35 (≤80)
35 (≤90)
40 (≤130)
45 (≤150)
50 (≤170)
60 (≤180)
70 (≤200)
80 (≤215)
90 (≤240)
95 (≤255)
α
VZ
(10 /K)
min
-9.0
-9.0
-9.0
-8.0
-8.0
-7.0
-6.0
-5.0
-3.0
-2.0
-1.0
2.0
3.0
4.0
5.0
5.0
5.0
6.0
7.0
7.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
10.0
10.0
10.0
10.0
9.0
9.0
10.0
10.0
-4
max
-4.0
-4.0
-3.0
-3.0
-3.0
-3.0
-1.0
2.0
4.0
6.0
7.0
7.0
7.0
7.0
8.0
8.0
9.0
9.0
9.0
9.0
9.5
9.5
10.0
10.0
10.0
10.0
10.0
10.0
10.0
12.0
12.0
12.0
12.0
11.0
12.0
12.0
12.0
BZX384C2V4
BZX384C2V7
BZX384C3V0
BZX384C3V3
BZX384C3V6
BZX384C3V9
BZX384C4V3
BZX384C4V7
BZX384C5V1
BZX384C5V6
BZX384C6V2
BZX384C6V8
BZX384C7V5
BZX384C8V2
BZX384C9V1
BZX384C10
BZX384C11
BZX384C12
BZX384C13
BZX384C15
BZX384C16
BZX384C18
BZX384C20
BZX384C22
BZX384C24
BZX384C27
BZX384C30
BZX384C33
BZX384C36
BZX384C39
BZX384C43
BZX384C47
BZX384C51
BZX384C56
BZX384C62
BZX384C68
BZX384C75
Notes :
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
2.20
2.50
2.80
3.10
3.40
3.70
4.00
4.40
4.80
5.20
5.80
6.40
7.00
7.70
8.50
9.40
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
(1) Measured with pulses
p
= 5 ms
Page 2 of 2
Rev. 02 : March 24, 2006
Embedded System
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