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HS1G-KM2G

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size369KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

HS1G-KM2G Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

HS1G-KM2G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMA, 2 PIN
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL

HS1G-KM2G Preview

HS1D-K - HS1M-K
Taiwan Semiconductor
CREAT BY ART
1A, 200V - 1000V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Fast switching for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
T
J
=25°C
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=100°C
T
J
=125°C
t
rr
C
J
R
θJA
T
J
T
STG
50
20
70
- 55 to +150
- 55 to +150
I
R
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
1.0
1.3
5
100
150
75
15
ns
pF
°C/W
°C
°C
μA
SYMBOL
HS1D
-K
HS1D
200
140
200
HS1G
-K
HS1G
400
280
400
HS1J
-K
HS1J
600
420
600
1
30
1.7
HS1K
-K
HS1K
800
560
800
HS1M
-K
HS1M
1000
700
1000
V
V
V
A
A
V
UNIT
Document Number: DS_D0000148
Version: B15
HS1D-K - HS1M-K
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
HS1x-K
(Note 1)
PACKING CODE
R3
R2
M2
G
PACKING CODE
SUFFIX
(*)
PACKAGE
SMA
SMA
SMA
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
Note 1: "x" defines voltage from 200V (HS1D-K) to 1000V (HS1M-K)
*: Optional available
EXAMPLE
EXAMPLE
PART NO.
HS1M-K R3G
PART NO.
HS1M-K
PACKING CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 MAXIMUM AVERAGE FORWARD
CURRENT DERATING
1.2
AVERAGE FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (μA)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
1000
1
0.8
0.6
0.4
0.2
0
80
90
100
110
120
130
140
150
T
J
=125°C
100
10
T
J
=25°C
1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
LEAD TEMPERATURE (
°
C)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT (A)
40
100
FIG. 4 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
PEAK FORWARD SURGE URRENT (A)
35
30
25
20
15
10
5
1
10
100
8.3ms single half sine wave
HS1G
10
HS1D
1
HS1J - HS1M
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
NUMBER OF CYCLES AT 60 Hz
FORWARD VOLTAGE (V)
Document Number: DS_D0000148
Version: B15
HS1D-K - HS1M-K
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
70
60
JUNCTION CAPACITANCE (pF)
50
40
30
20
10
0
0.1
1
10
REVERSE VOLTAGE (V)
100
1000
f=1.0MHz
Vsig=50mVp-p
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.00
2.29
1.90
0.80
4.80
0.05
0.15
Max
1.63
4.60
2.83
2.25
1.50
5.20
0.20
0.31
Unit (inch)
Min
0.050
0.157
0.090
0.075
0.031
0.189
0.002
0.006
Max
0.064
0.181
0.111
0.089
0.059
0.205
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Marking code
Green Compound
Date Code
Factory Code
Document Number: DS_D0000148
Version: B15
HS1D-K - HS1M-K
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D0000148
Version: B15
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