P6KE SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Excellent clamping capability
- Low dynamic impedance
- 600W surge capability at 10 / 1000
μs
waveform
- Fast response time: Typically less than
1.0ps from 0 volt to V
BR
for unidirectional
and 5.0ns for bidirectional
- Typical I
R
less than 1μA above 10V
- UL recognized file # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Transient Voltage Suppressor
DO-204AC (DO-15)
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.4g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25℃, Tp=1ms (Note 1)
Steady state power dissipation at T
L
=75℃
lead lengths .375", 9.5mm (Note 2)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (Note 3)
Operating junction temperature range
Storage temperature range
Note 2: Mounted on 5 x 5 mm Copper Pads to Each Terminal
Note 3: 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum
SYMBOL
P
PK
P
D
I
FSM
T
J
T
STG
VALUE
600
5
100
- 55 to +175
- 55 to +175
UNIT
Watts
Watts
A
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types P6KE6.8 through Types P6KE440
2. Electrical Characterstics Apply in Both Directions
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
P6KExxxx
(Note 1)
Prefix "H"
PACKING CODE
A0
R0
B0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
DO-15
DO-15
DO-15
PACKING
1,500 / Ammo box
3,500 / 13" Paper reel
1,000 / Bulk packing
Note 1: "xxxx" defines voltage from 6.8V (P6KE6.8) to 440V (P6KE440)
EXAMPLE
PREFERRED P/N
P6KE56A A0
P6KE56A A0G
P6KE56AHA0
PART NO.
P6KE56A
P6KE56A
P6KE56A
H
AEC-Q101
QUALIFIED
PACKING CODE
A0
A0
A0
G
Green compound
AEC-Q101 qualified
Version: J14
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1405018
P6KE SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA= 25℃
PEAK PULSE POWER(P
PP
) or CURRENT(I
PPM
)
DERATING IN PERCENTAGE(%)
125
100
75
50
25
0
0
25
50
75
100
125
150
175
200
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
10
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (uS)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
100
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
IFSM, PEAK FORWARD SURGE CURRENT
(A)
8.3ms Single Half Sine Wave
tr=10μsec
Peak Value
IPPM
Half Value-IPPM/2
10/1000μs WAVEFORM
as DEFINED by R.E.A.
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
MEASURED at
STAND-OFF
VOLTAGE,Vwm
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Document Number: DS_D1405018
Version: J14
P6KE SERIES
Taiwan Semiconductor
CREAT BY ART
Nominal
Voltage
Breakdown Voltage
(Note 1)
V
BR
(V)
Min
P6KE68
P6KE68A
P6KE75
P6KE75A
P6KE82
P6KE82A
P6KE91
P6KE91A
P6KE100
P6KE100A
P6KE110
P6KE110A
P6KE120
P6KE120A
P6KE130
P6KE130A
P6KE150
P6KE150A
P6KE160
P6KE160A
P6KE170
P6KE170A
P6KE180
P6KE180A
P6KE200
P6KE200A
P6KE220
P6KE220A
P6KE250
P6KE250A
P6KE300
P6KE300A
P6KE350
P6KE350A
P6KE400
P6KE400A
P6KE440
P6KE440A
68
68
75
75
82
82
91
91
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
180
200
200
220
220
250
250
300
300
350
350
400
400
440
440
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
332
360
380
396
418
(V)
Max
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Test
Current
I
T
(mA)
Stand-Off
Voltage
V
WM
(V)
Maximum
@ V
WM
I
D
(μA)
Maximum
Current
I
PPM
(A)
(Note 2)
6.4
6.8
5.8
6.1
5.3
5.5
4.8
5.0
4.3
4.5
3.9
4.1
3.6
3.8
3.3
3.5
2.9
3.0
2.7
2.8
2.5
2.6
2.4
2.5
2.1
2.2
1.8
1.9
1.7
1.8
1.4
1.5
1.2
1.3
1.0
1.1
1.0
1.04
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Maximum
@ I
PPM
Vc
(V)
Maximum
Coefficient
of V
BR
(%/℃)
General
Part
Number
Reverse Leakage Peak Surge Clamping Voltage Temperature
Notes:
1. V
BR
measure after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Document Number: DS_D1405018
Version: J14
Microchip MCU
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