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TSF30U120CC0

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 120V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size214KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

TSF30U120CC0 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 120V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

TSF30U120CC0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionITO-220AB, 3 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.88 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current160 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage120 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
TSF30U100C thru TSF30U120C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case:
ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
V
AC
Typ.
I
F
= 5A
I
F
= 7.5A
Instantaneous forward voltage per diode
( Note1 )
I
F
= 15A
I
F
= 5A
I
F
= 7.5A
I
F
= 15A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
T
J
= 25°C
T
J
= 125°C
I
R
R
θJC
T
J
T
STG
T
J
= 125°C
V
F
T
J
= 25°C
V
F
0.52
0.56
0.66
0.44
0.51
0.60
12
7.0
2.5
- 55 to +150
- 55 to +150
Max.
-
-
0.74
-
-
0.67
500
35
TSF30U
100C
100
30
15
160
10000
1500
Typ.
0.56
0.65
0.78
0.49
0.56
0.65
15
5
3.5
Max.
-
-
0.88
-
-
0.75
500
35
O
TSF30U
120C
120
UNIT
V
A
A
V/μs
V
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Isolation voltage from terminal to heatsink t = 1 min
V
μA
mA
C/W
O
O
C
C
Document Number: DS_D1407026
Version: A14
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