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NDB605BE

Description
42A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size71KB,1 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric

NDB605BE Overview

42A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

NDB605BE Parametric

Parameter NameAttribute value
MakerTexas Instruments
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
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