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2SC3075(TE16L

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size188KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC3075(TE16L Overview

Small Signal Bipolar Transistor

2SC3075(TE16L Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknow
2SC3075
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT process)
2SC3075
Switching Regulator and High Voltage Switching
Applications
DC-DC Converter Applications
DC-AC Converter Applications
Excellent switching times: t
r
= 1.0
μs
(max)
t
f
= 1.5
μs
(max), (I
C
= 0.5 A)
High collector breakdown voltage: V
CEO
= 400 V
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
500
400
7
0.8
1.5
0.5
1.0
10
150
−55
to 150
Unit
V
V
V
A
JEDEC
A
W
°C
°C
2-7J1A
JEITA
TOSHIBA
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2010-02-05

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