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2N5153S

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

2N5153S Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN

2N5153S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
2N5153S
Dimensions in mm (inches).
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
Bipolar PNP Device in a
Hermetically sealed TO39
Metal Package.
Bipolar PNP Device.
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
V
CEO
= 80V
5.08 (0.200)
typ.
I
C
= 5A
2.54
(0.100)
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
45°
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
80
5
Units
V
A
-
Hz
@ 5/2.5 (V
CE
/ I
C
)
70
60M
200
10
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
1-Aug-02

2N5153S Related Products

2N5153S 2N5153SR1 2N5153S.MODR1 2N5153S.MOD
Description Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN
Is it Rohs certified? incompatible conform to conform to incompatible
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compli compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 70 70 70
JEDEC-95 code TO-205AD TO-205AD TO-205AD TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz 60 MHz 60 MHz
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