TO-220F 8A Thyristor
TF821S, TF841S, TF861S
s
Features
q
Repetitive peak off-state voltage: V
DRM
=200, 400, 600V
q
Average on-state current: I
T(AV)
=8A
q
Gate trigger current: I
GT
=15mA max
q
Isolation voltage: V
ISO
=1500V(50Hz Sine wave, RMS)
13.0 min
External Dimensions
(Unit: mm)
φ
3.3
±
0.2
8.4
±
0.2
4.0
±
0.2
10.0
±
0.2
4.2
±
2.8
0.2
C 0.5
16.9
±
0.3
0.8
±
0.2
a
b
1.35
±
0.15
0.15
1.35
±
+
0.2
0.85
–
0.1
+
0.2
0.45 –
0.1
2.4
±
0.2
a. Part Number
b. Lot Number
q
UL approved type available
3.9
±
0.2
2.54
2.2
±
0.2
2.54
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
Ratings
TF821S
200
200
300
300
TF841S
400
400
500
500
8.0
12.6
120
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
1500
TF861S
600
600
700
700
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
V
Conditions
Tj= –40 to +125°C, R
GK
=1kΩ
50Hz Half-cycle sinewave, Continuous current, Tc=87°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f
f
f
50Hz, duty
50Hz
50Hz, duty
10%
10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical
Characteristics
Parameter
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
Symbol
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
Ratings
min
typ
max
2.0
2.0
1.4
1.5
5.0
0.1
4.0
50
30
3.6
15
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/W
Conditions
Tj=125
°C,
V
D
=V
DRM
(V
RRM
), R
GK
=1kΩ
T
C
=25
°C,
I
TM
=15A
V
D
=6V, R
L
=10Ω, T
C
=25
°C
V
D
=1/2
×
V
DRM
, Tj=125
°C,
R
GK
=1kΩ
R
GK
=1kΩ, Tj=25
°C
V
D
=1/2
×
V
DRM
, Tj=125
°C,
R
GK
=1kΩ, C
GK
=0.033µF
Tc=25
°C
Junction to case
16
TF821S, TF841S, TF861S
v
T
–
i
T
Characteristics (max)
100
50
I
TSM
Ratings
140
Initial junction temperature
Tj=125°C
I
TSM
Gate Characteristics
Gate trigger voltage V
GT
(V)
14
12
Surge on-state current I
TSM
(A)
120
10 ms
1 cycle
1
i
T
(A)
v
GF
(V)
Tj =125°C
10
100
80
10
8
6
4
2
0
0
1
P
G
M
0
On-state current
0
10
T
j
=25°C
20
T
j
= –20°C
30
50Hz
Tj = 25°C
5
Gate voltage
Gate trigger current I
GT
(mA)
=5
60
40
20
1
5
10
50
100
W
See graph at the upper right
2
3
1
0.8
1.0
2.0
3.0
On-state voltage
v
T
( V )
Number of cycle
Gate current
i
GF
(A)
I
T(AV)
– P
T(AV)
Characteristics
20
I
T(AV)
– Tc Ratings
150
50Hz Half-cycle sinewave
θ
: Conduction angle
Average on-state power P
T(AV)
(W)
50Hz Half-cycle sinewave
θ
: Conduction angle
180°
θ
Case temperature T
C
(°C)
0
°
12
18
0
°
16
DC
125
0°
180°
θ
0°
12
30
°
60
°
90
°
100
75
θ=30°
90°
120°
180°
60°
DC
8
θ
=
50
4
25
0
0
5
10
15
0
0
5
10
15
Average on-state current I
T (AV)
(A)
Average on-state current I
T (AV)
(A)
Pulse trigger temperature
Characteristics
v
gt
(Typical)
2.0
Pulse trigger temperature
Characteristics
i
gt
(Typical)
t
w
trigger
I
GT
DC gateat 25°C
current
I
H
temperature Characteristics
(Typical)
i
gt
t
w
100
(V
D
=30V, R
GK
=1kΩ)
)
trigger
V
GT
DC gateat 25°C
voltage
)
v
gt
30
(
1.5
T
j
=– 40°C
–20°C
T
j
=– 40°C
5
–20°C
25°C
v
gt
(
Gate trigger voltage
)
at Ta and
t
w
1.0
25°C
75°C
125°C
i
gt
(
Gate trigger current
)
at Ta and
t
w
Holding current I
H
(mA)
10
50
(
1
0.5
75°C
125°C
0.2
0.5 1
10
100
1000
10
5
3
–40
0.5
0.5
1
10
100
1000
0
25
50
75
100
Pulse width
t
w (µs)
Pulse width
t
w (µs)
Junction temperature Tj (°C)
V
GT
temperature Characteristics
(Typical)
1.0
(V
D
=6V, R
L
=10Ω)
I
GT
temperature Characteristics
(Typical)
50
30
(V
D
=6V, R
L
=10Ω)
Transient thermal resistance
Characteristics
(Junction to case)
10
0.8
Gate trigger current I
GT
(mA)
Gate trigger voltage V
GT
(V)
0.6
10
Transient thermal resistance
r
th
(°C/W)
1
0.4
5
3
0.2
0
–40
0
25
50
75
100
125
1
– 40
0.1
1
10
0
25
50
75
100
125
10
2
10
3
10
4
Junction temperature Tj (°C)
Junction temperature Tj (°C)
t, Time (ms)
T
j
= –40°C
2
125
10
5
17
Analogue and Mixed Signal
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