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2SB649AD(SOT-89)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size111KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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2SB649AD(SOT-89) Overview

Transistor

2SB649AD(SOT-89) Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompli
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)160
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountYES
UTC 2SB649 /A
.
PNP EPITAXIAL SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with
UTC 2SB669/A
1
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
2SB649
2SB649A
Emitter-base voltage
Collector current
Collector peak current
Collector power dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
lc
(peak)
Pc
T
j
T
STG
RATING
-180
-120
-160
-5
-1.5
-3
1
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector to bse breakdown voltage
Collector to emitter breakdown
voltage
2SB649
2SB649A
Emitter to base breakdown voltage
Collector cut-off current
2SB649
DC current gain
2SB649A
Collector-emitter saturation voltage
Base-emitter voltage
Current gain bandwidth product
Output capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR) EBO
I
CBO
h
FE1
h
FE2
h
FE1
h
FE2
V
CE
(sat)
V
BE
f
T
Cob
TEST CONDITIONS
I
C
=-1mA, I
E
=0
I
C
=-10mA, R
BE
=∞
MIN
-180
-120
-160
-5
60
30
60
30
TYP
MAX
UNIT
V
V
V
µA
I
E
=-1mA, I
C
=0
V
CB
=-160V, I
E
=0
V
CE
=-5V, Ic=-150mA (note)
V
CE
=-5V, Ic=-500mA (note)
V
CE
=-5V, Ic=-150mA (note)
V
CE
=-5V, Ic=-500mA (note)
Ic=-600mA, I
B
=-50mA
V
CE
=-5V, Ic=-150mA
V
CE
=-5V,Ic=-150mA
V
CB
=-10V, I
E
=0, f=1MHz
-10
320
200
-1
-1.5
140
27
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-035,A

2SB649AD(SOT-89) Related Products

2SB649AD(SOT-89) 2SB649AB(SOT-89)
Description Transistor Transistor
Reach Compliance Code compli compli
Maximum collector current (IC) 1.5 A 1.5 A
Configuration Single Single
Minimum DC current gain (hFE) 160 60
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
surface mount YES YES
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