UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
PNP SILICON TRANSISTOR
1
SOT-89
TO-252
APPLICATIONS
*
Low frequency power amplifier complementary pair with UTC
2SD669/A
1
1
TO-92
TO-92NL
1
1
TO-126
TO-126C
ORDERING INFORMATION
Normal
2SB649x-x-AB3-R
2SB649x-x-T6C-K
2SB649x-x-T60-K
2SB649x-x-T92-B
2SB649x-x-T92-K
2SB649x-x-T92-R
2SB649x-x-T9N-B
2SB649x-x-T9N-K
2SB649x-x-TN3-R
Ordering Number
Lead Free
2SB649xL-x-AB3-R
2SB649xL-x-T6C-K
2SB649xL-x-T60-K
2SB649xL-x-T92-B
2SB649xL-x-T92-K
2SB649xL-x-T92-R
2SB649xL-x-T9N-B
2SB649xL-x-T9N-K
2SB649xL-x-TN3-R
Halogen Free
2SB649xG-x-AB3-R
2SB649xG-x-T6C-K
2SB649xG-x-T60-K
2SB649xG-x-T92-B
2SB649xG-x-T92-K
2SB649xG-x-T92-R
2SB649xG-x-T9N-B
2SB649xG-x-T9N-K
2SB649xG-x-TN3-R
Package
SOT-89
TO-126C
TO-126
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-252
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
Packing
Tape Reel
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R204-006,H
2SB649/A
PARAMETER
Collector-Base Voltage
SYMBOL
V
CBO
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
RATING
UNIT
-180
V
2SB649
-120
V
Collector-Emitter Voltage
V
CEO
2SB649A
-160
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1.5
A
Collector Peak Current
l
C(PEAK)
-3
A
TO-126
1
W
TO-126C
1.3
W
Power Dissipation
P
C
TO-92/TO-92NL
0.6
W
SOT-89
0.5
W
TO-252
2
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-89
TO-92/ TO-92NL
TO-126
Junction to Case
TO-126C
TO-252
SYMBOL
RATINGS
38
80
6.25
10
4.5
UNIT
θ
JC
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Base Breakdown Voltage
BV
CBO
I
C
=-1mA, I
E
=0
Collector to Emitter Breakdown
2SB649
BV
CEO
I
C
=-10mA, R
BE
=∞
Voltage
2SB649A
Emitter to Base Breakdown Voltage
BV
EBO
I
E
=-1mA, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=-160V, I
E
=0
h
FE1
V
CE
=-5V, I
C
=-150mA (note)
2SB649
h
FE2
V
CE
=-5V, I
C
=-500mA (note)
DC Current Gain
h
FE1
V
CE
=-5V, I
C
=-150mA (note)
2SB649A
h
FE2
V
CE
=-5V, I
C
=-500mA (note)
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-600mA, I
B
=-50mA
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-150mA
Current Gain Bandwidth Product
f
T
V
CE
=-5V,I
C
=-150mA
Output Capacitance
Cob
V
CB
=-10V, I
E
=0, f=1MHz
Note: Pulse test.
MIN
-180
-120
-160
-5
60
30
60
30
TYP
MAX UNIT
V
V
-10
320
200
-1
-1.5
140
27
V
V
MHz
pF
V
μA
CLASSIFICATION OF h
FE1
RANGE
2SB649
2SB649A
B
60-120
60-120
RANK
C
100-200
100-200
D
160-320
-
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-006,H
2SB649/A
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
-5
.5
PNP SILICON TRANSISTOR
Typical Transfer Characteristics
-500
Collector Current, I
C
(mA)
V
CE
=-5V
1.0
0.8
0.6
0.4
0.2
Collector Current, I
C
(A)
0
-4.
5
-3. 0
-3.
5
-2.
-4
.
5 -5
.0
-100
5°
С
=2
P
D
0W
-2.0
-1.5
-1.0
-0.5mA
I
B
=0
-10
T
C
=25°С
0
-10
-20
-30
-40
-50
Collector to Emitter Voltage, V
CE
(V)
-1
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
DC Current Transfer Ratio, h
FE
Collector to Emitter Saturation
Voltage, V
CE(SAT)
(V)
DC Current Transfer Ratio vs.
Collector Current
350
V
CE
=-5V
5°
С
300
Ta=7
250
200
150
100
50
1
-1
-10
-100
-1,000
Collector Current, I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
I
C
=10I
B
25°
С
T
C
=-
25°
С
75°
С
-25°
С
25°
С
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
I
C
=10 I
B
Ta=7
25°
С
-25°
С
T
°
С
75
=
C
-1
-10
-100
Collector Current, I
C
(mA)
-1.2
Base to Emitter Saturation Voltage,
V
BE(SAT)
(V)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1
Gain Bandwidth Product, f
T
(MHz)
Gain Bandwidth Product
vs. Collector Current
-240
V
CE
=5V
Ta=25°С
-200
-160
-120
-80
-40
0
-10
-3
-10 -30 -100 -300 -1000
Collector Current, I
C
(mA)
-30
-100
-300
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-2
5°
2
С
5°
С
-1,000
-1000
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QW-R204-006,H
2SB649/A
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
Collector Output Capacitance, C
ob
(pF)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C
(A)
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QW-R204-006,H
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