UNISONIC TECHNOLOGIES CO., LTD
2SC2655
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
FEATURES
NPN SILICON TRANSISTOR
3
1
SOT-89
2
1
SOT-23
(JEDEC TO-236)
* Low saturation voltage: V
CE(SAT)
= 0.5V (Max.)
* High speed switching time: T
STG
=1.0μs (Typ.)
1
TO-252
1
TO-92NL
ORDERING INFORMATION
Ordering Number
Lead Free
2SC2655L-x-AB3-R
2SC2655L-x-AE3-R
2SC2655L-x-TN3-R
2SC2655L-x-T9N-B
2SC2655L-x-T9N-K
Note: Pin Assignment: B: Base
2C2655G-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
Halogen Free
2SC2655G-x-AB3-R
2SC2655G-x-AE3-R
2SC2655G-x-TN3-R
2SC2655G-x-T9N-B
2SC2655G-x-T9N-K
C: Collector E: Emitter
Package
SOT-89
SOT-23
TO-252
TO-92NL
TO-92NL
Pin Assignment
1
2
3
B
C
E
B
E
C
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, AE3: SOT-23, T9N: TO-92NL
TN3: TO-252
(3) refer to Classification of h
FE1
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-23
L5
L: Lead Free
G: Halogen Free
SOT-89
Date Code
L: Lead Free
G: Halogen Free
2SC2655
1
TO-252
UTC
2SC2655
Lot Code
1
L: Lead Free
G: Halogen Free
Date Code
TO-92NL
L: Lead Free
G: Halogen Free
Date Code
UTC
2SC2655
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1
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2SC2655
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse) (Note 2)
Base Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
RATING
UNIT
50
V
50
V
5
V
2
A
3
A
0.5
A
SOT-23
350
mW
SOT-89
500
mW
Collector Power Dissipation
P
C
TO-252
1000
mW
TO-92NL
900
mW
Junction Temperature
T
J
+150
C
Operating Temperature
T
OPR
-40 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. P
W
≦16ms,
Duty Cycle≦50%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
= 10μA, I
E
= 0
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
C
OB
I
C
= 10mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
=50V, I
E
= 0
V
EB
= 5V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.5A
I
C
=1A, I
B
=0.05A
I
C
=1A, I
B
=0.05A
V
CE
=2V, I
C
=0.5A
V
CB
= 10V, I
E
= 0, f=1MHz
20μs
INPUT
I
B1
I
B2
I
B2
Vcc=30 V
I
B1
OUTPUT
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
MIN
50
50
5
TYP
MAX
UNIT
V
V
V
μA
μA
70
40
1.0
1.0
240
0.5
1.2
100
30
V
V
MHz
pF
10Ω
Switching Time(Turn-on Time)
t
ON
0.1
μS
I
B1
= -I
B2
=0.05A
DUTY CYCLE≦1%
CLASSIFICATION OF h
FE1
RANK
RANGE
O
70-140
Y
120-240
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2SC2655
TYPICAL CHARACTERISTICS
Ic-V
CE
25 20
Common Emitter
T
A
=25°С
12
1.6
1.2
0.8
0.4
0
0
2
4
4
I
B
=2mA
8
10
12 14
Collector -Emitter Voltage, Vc
E
(V)
6
10
8
6
Collector -Emitter Voltage, Vc
E
(V)
NPN SILICON TRANSISTOR
V
CE
-Ic
1
0.8
0.6
0.4
0.2
0
I
B
=5mA
10
20
Common
Emitter
T
A
=25°С
30
40
2.4
Collector Current, Ic (A)
2.0
18
15
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector Current, Ic (A)
V
CE
-Ic
Collector -Emitter Voltage, Vc
E
(V)
Collector -Emitter Voltage, Vc
E
(V)
V
CE
-Ic
1
0.8
0.6
0.4
0.2
0
10
IB=5mA
Common EmitterT
A
= -55°С
1
0.8
0.6
0.4
0.2
0
I
B
=5mA
10
20
30
40
Common Emitter
T
A
=100°С
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector Current, Ic (A)
Collector Current, Ic (A)
h
FE
-Ic
1000
DC Current Gain, h
FE
V
CE(SAT)
-Ic
1
Collector Emitter Saturation
Voltage, V
CE
(SAT)
(V)
500
300
100
50
30
10
0.01
T
A
=25°С
Common Emitter
V
CE
=2V
T
A
=100°С
0.5
0.3
0.1
T
A
=100°С
Common Emitter
Ic/I
B
=20
T
A
=-55°С
0.05
T
A
=25°С
T
A
=-55°С
0.03
0.1
0.3
1
0.02
0.01
0.03 0.05 0.1
0.3 0.5
1
Collector Current, Ic (A)
Collector Current, Ic (A)
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TYPICAL CHARACTERISTICS (Cont.)
V
BE(SAT)
-Ic
5
NPN SILICON TRANSISTOR
Ic-V
BE
2.0
Common Emitter
V
CE
=2 V
1.5
T
A
=100°С
1.0
T
A
=25°С
0.5
0
T
A
=-55°С
Base Emitter Saturation
Voltage, V
BE(SAT)
T
A
=-55°С
1
0.5
0.3
0.1
0.01
T
A
=25°С
T
A
=100°С
0.03 0.05 0.1
0.3
1
Collector Current, Ic (A)
3
Common Emitter
Ic/I
B
=20
0
0.4
0.8
1.2
1.6
2.0
Collector Current, Ic (A)
Safe Operating Area
Base -Emitter Voltage, V
BE
(V)
Pc-Ta
Collector Power Dissipation, Pc (mW)
5
3
Ic MAX.(PULSED)*
1ms*
10ms*
1000
800
600
400
200
0
Collector Current, Ic(A)
PT=1s
0.5
0.3 DC Operation
T
A
=25°С
0.1
0.05
0.03
T
A
=25°С
1s*
Single Nonrepetitive Pulse
Curves Must Be Derated Linearly With
Increase In Temperature
V
CEO
MAX.
Collector Current-Ic(mA)
1
M
.(C
AX
Ic INU
N
O
U
O
S)
100ms*
0
40
80
120
160
200
240
0.01
0.2
0.5
1
3
10 30
100
Collector-Emitter Voltage, V
CE
(V)
Ambient Temperature,T
A
(°С)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein .
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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