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2SD1060G-Q-TF3-T

Description
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size279KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

2SD1060G-Q-TF3-T Overview

Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

2SD1060G-Q-TF3-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionTO-220F, 3 PIN
Reach Compliance Codecompli
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
UNISONIC TECHNOLOGIES CO., LTD
2SD1060
NPN PLANAR SILICON
TRANSISTOR
FEATURES
NPN SILICON TRANSISTOR
* Low collector-to-emitter saturation voltage:
V
CE(SAT)
=0.4V max/I
C
=3A, I
B
=0.3A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD1060L-x-AB3-R
2SD1060G-x-AB3-R
2SD1060L-x-T60-K
2SD1060G-x-T60-K
2SD1060L-x-T92-B
2SD1060G-x-T92-B
2SD1060L-x-T92-K
2SD1060G-x-T92-K
2SD1060L-x-T92-R
2SD1060G-x-T92-R
2SD1060L-x-TA3-T
2SD1060G-x-TA3-T
2SD1060L-x-TF3-T
2SD1060G-x-TF3-T
2SD1060L-x-TM3-T
2SD1060G-x-TM3-T
2SD1060L-x-TN3-T
2SD1060G-x-TN3-T
2SD1060L-x-TN3-R
2SD1060G-x-TN3-R
Package
SOT-89
TO-126
TO-92
TO-92
TO-92
TO-220
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Bulk
Tape Box
Bulk
Tape Reel
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
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