UTC 2SD965B
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
* Collector current up to 5A
* 2SD965B : Collector-Emitter voltage up to 30 V
NPN EPITAXIAL SILICON TRANSISTOR
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
1
TO-92
1: EMITTER
2: COLLECTOR 3: BASE
*Pb-free plating product number: 2SD965BL
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATINGS
50
30
7
750
5
150
-65 ~ +150
UNIT
V
V
V
mW
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
B
VCBO
Collector-emitter breakdown
BV
CEO
voltage
Emitter-base breakdown voltage
BV
EBO
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
DC current gain(note)
Collector-emitter saturation voltage
Current gain bandwidth product
Output capacitance
TEST CONDITIONS
Ic=100µA,IE=0
Ic=1mA,IB=0
MIN
50
30
7
200
200
200
230
150
150
50
800
1
V
MHz
pF
TYP
MAX
UNIT
V
V
V
nA
nA
I
E
=10µA,Ic=0
V
CB
=30V,I
E
=0
V
EB
=7V,Ic=0
V
CE
=2V,Ic=1mA
V
CE
=2V,Ic=0.5A
h
FE
V
CE
=2V,Ic=2A
V
CE
(sat) Ic=3A, IB= 0.1A
f
T
V
CE
=6V,Ic=50mA
Cob
V
CB
=20V,I
E
=0, f=1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
Q
230-380
R
340-600
S
560-800
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-078,A
www.unisonic.com.tw
UTC 2SD965B
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
3.0
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 DC current Gain
10
3
Fig.3 Base-Emitter on Voltage
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
Ic,Collector current (A)
2.5
H
FE
, DC current Gain
10
2
2.0
I
B
=1.5mA
1.5
V
CE
=2V
I
B
=1.0mA
I
B
=0.5mA
10
1
1.0
0
0
0.4
0.8
1.2
1.6
2.0
10
0
-1
10
10
1
10
2
10
3
10
4
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Fig.4 Saturation voltage
10
4
10
3
Fig.5 Current gain-bandwidth
product
10
3
Fig.6 Collector output Capacitance
Ic=10*I
B
Current Gain-bandwidth
product,f
T
(MHz)
Saturation voltage (mV)
Cob,Capacitance (pF)
V
CE
=6V
V
BE
(sat)
2
10
3
10
10
2
f=1MHz
I
E
=0
V
CE
(sat)
10
2
10
1
10
1
10
1
0
10
10
1
10
2
10
3
10
4
10
0
10
0
10
1
10
2
10
3
10
0
10
-1
10
0
10
1
10
2
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-078,A
www.unisonic.com.tw
UTC 2SD965B
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R201-078,A
www.unisonic.com.tw
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