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2N3999

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-214AA, Metal, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size83KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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2N3999 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-214AA, Metal, 3 Pin

2N3999 Parametric

Parameter NameAttribute value
MakerVishay
package instructionPOST/STUD MOUNT, O-MUPM-D3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-based maximum capacity150 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-214AA
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power consumption environment30 W
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Maximum off time (toff)2000 ns
Maximum opening time (tons)300 ns
VCEsat-Max2 V

2N3999 Related Products

2N3999 2N3998
Description Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-214AA, Metal, 3 Pin Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-214AA, Metal, 3 Pin
Maker Vishay Vishay
package instruction POST/STUD MOUNT, O-MUPM-D3 POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 5 A 5 A
Collector-based maximum capacity 150 pF 150 pF
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 20 15
JEDEC-95 code TO-214AA TO-214AA
JESD-30 code O-MUPM-D3 O-MUPM-D3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 30 W 30 W
Maximum power dissipation(Abs) 2 W 2 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 40 MHz 40 MHz
Maximum off time (toff) 2000 ns 1500 ns
Maximum opening time (tons) 300 ns 300 ns
VCEsat-Max 2 V 2 V
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