BC817, BC818
Small Signal Transistors (NPN)
Features
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
• NPN Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
-16, -25, and -40 according to their current gain.
• As complementary types, the PNP transistors
BC807 and BC808 are recommended.
1
2
max. .004 (0.1)
Mechanical Data
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
.045 (1.15)
.037 (0.95)
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
Mounting Pad Layout
0.037 (0.95)
0.037 (0.9
Type
BC817-16
-25
-40
BC818-16
-25
-40
Marking
6A
6B
6C
6E
6F
6G
0.035 (0.9)
0.079 (2.0)
0.031 (0.8)
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50 ˚C
Thermal Resistance Junction to Ambiant Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
(base shorted)
(T
A
= 25°C unless otherwise noted)
Symbol
BC817
BC818
BC817
BC818
V
CES
V
CEO
V
EBO
I
C
I
CM
I
BM
–I
EM
P
tot
R
θJA
R
θSB
T
j
T
S
Value
50
30
45
25
5
800
1000
200
1000
310
(1)
450
(1)
320
(1)
150
–65 to +150
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
5/22/00
(base open)
BC817, BC818
Small Signal Transistors (NPN)
Electrical Characteristics
(T
Parameter
DC Current Gain
Current Gain Group-16
-25
-40
h
FE
V
CE
= 1V, I
C
= 100mA
100
160
250
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
12
250
400
600
—
0.7
1.3
1.2
100
100
5
100
—
—
—
—
—
—
V
V
V
nA
nA
µA
nA
MHz
pF
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
h
FE
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
BC817
BC818
Emitter-Base Cutoff Current
Gain-Bandwidth Product
Collector-Base Capacitance
Note:
(1) Device on fiberglass substrate, see layout on next page
V
CE
= 1V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 45V
V
CE
= 25V
V
CE
= 25 V, T
j
= 150˚C
V
EB
= 4V
V
CE
= 5V, I
C
= 10mA
f = 50MHz
V
CB
= 10V, f = 1MHz
V
CEsat
V
BEsat
V
BEon
I
CES
I
EBO
f
T
C
CBO
0.30 (7.5)
Layout for R
θJA
test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.47 (12)
0.03 (0.8)
Dimensions in inches (millimeters)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
FPGA/CPLD
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