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1N6631ASMSTXV

Description
Rectifier Diode, 1 Phase, 1 Element, 1.8A, 1100V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

1N6631ASMSTXV Overview

Rectifier Diode, 1 Phase, 1 Element, 1.8A, 1100V V(RRM), Silicon,

1N6631ASMSTXV Parametric

Parameter NameAttribute value
package instructionE-LELF-R2
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.95 V
JESD-30 codeE-LELF-R2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1.8 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
GuidelineMIL-19500
Maximum repetitive peak reverse voltage1100 V
Maximum reverse current4 µA
Maximum reverse recovery time0.06 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
1N6626 – 1N6631
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Series
2.3 – 1.8 AMP
HYPER FAST RECOVERY
RECTIFIER
200 - 1200 VOLTS
30 - 60 nsec
FEATURES:
Hyper Fast Recovery: 30 - 60 nsec maximum
PIV up to 1200 Volts
Low Reverse Leakage Current
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Typical Weight: 0.75 g (Axial Leaded); 0.45 g (SMS)
TX, TXV, and Space Level Screening Available
2/
QPL registered devices per MIL-PRF-19500/590 may be
available, contact factory
Designer’s Data Sheet
Part Number/Ordering Information
1/
1N __ __ __
│ │ └
Screening
2/
│ │
__ = Not screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
│ └
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
Voltage/Family
6630 = 900V
6626 = 200V
6631 = 1000V
6627 = 400V
6631A = 1100V
6628 = 600V
6631B = 1200V
6629 = 800V
MAXIMUM RATINGS
3/
1N6626
1N6627
1N6628
1N6629
1N6630
1N6631
1N6631A
1N6631B
1N6626 - 6628
1N6629 - 6631
o
SYM
VALUE
200
400
600
800
900
1000
1100
1200
2.3
1.8
75
60
-65 to +175
+150
22
6.5
UNIT
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
V
RRM
V
RWM
V
R
V
DC
Average Rectified Forward Current
4/
(Average current with a half sine wave including reverse voltage
amplitude equal to the magnitude of the full rated V
RWM
)
I
O1
I
FSM
T
stg
T
J
A
A
o
o
o
Peak Surge Current
Storage Temperature
Maximum Operating Temperature
Maximum Thermal Resistance
NOTES:
(t
p
= 8.3 ms Pulse, Half Sine Wave, Superimposed on I
O
, T
A
= 25 C)
1N6626 - 6630
1N6631
C
C
Junction to Lead, L = 0.375” (Axial Lead)
Junction to End Tab (Surface Mount)
R
JL
R
JE
C/W
Axial Leaded (__)
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @ 25°C.
4/ Derate linearly 1.33 percent/°C for T
L
> +75°C (Axial Leaded); Derate linearly 2.5
percent/°C for T
EC
> +110°C (SMS).
Square Tab
Surface Mount
(SMS)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0179A
DOC

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