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Datasheet> All Categories > 2MBI450UE-120
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2MBI450UE-120

Description
DUAL IGBT
File Size105KB，4 Pages
ManufacturerETC1
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2MBI450UE-120 Overview

DUAL IGBT

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2MBI450UE-120
IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
1200V / 450A 2 in one-package
Equivalent Circuit Schematic
C1
E2
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
C2E1
G1 E1
G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
iso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms
Tc=25°C
Tc=80°C
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
Terminals *
2
1 device
AC:1min.
Rating
1200
±20
675
450
1350
900
450
900
2080
+150
-40 to +125
2500
3.5
4.5
Unit
V
V
A
W
°C
VAC
N·m
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
Input capacitance
Turn-on time
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
Reverse recovery time
Lead resistance, terminal-chip*3
t
rr
R lead
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=450mA
V
GE
=15V, I
C
=450A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=450A
V
GE
=±15V
R
G
=0.68
Ω
V
GE
=0V
I
F
=450A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
I
F
=450A
Characteristics
Min.
Typ.
–
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6.5
2.00
2.25
1.75
2.00
50
0.36
0.21
0.03
0.37
0.07
1.85
1.95
1.60
1.70
–
0.45
Unit
Max.
3.0
600
8.5
2.35
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.15
–
1.90
–
0.35
–
µs
mΩ
nF
µs
mA
nA
V
V
Turn-off time
Forward on voltage
V
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
4
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
–
–
–
–
–
0.0167
Unit
Max.
0.060
0.08
–
°C/W
°C/W
°C/W
*
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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