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1N1190

Description
Rectifier Diode, 1 Phase, 1 Element, 35A, 600V V(RRM), Silicon, DO-5,
CategoryDiscrete semiconductor    diode   
File Size383KB,4 Pages
ManufacturerSemitronics Corp.
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1N1190 Overview

Rectifier Diode, 1 Phase, 1 Element, 35A, 600V V(RRM), Silicon, DO-5,

1N1190 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Maximum output current35 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
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