30CTH02S/30CTH02-1
Vishay High Power Products
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
FEATURES
30CTH02S
30CTH02-1
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
Base
Common
Cathode
2
Base
Common
Cathode
2
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
Vishay HPP‘s 200 V series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
1
Anode
2
Common
Cathode
3
Anode
1
Anode
2
Common
Cathode
3
Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(maximum)
I
F(AV)
V
R
30 ns
2 x 15 A
200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
per diode
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 159 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
200
15
30
200
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 15 A
I
F
= 15 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.92
0.78
-
5
57
8
MAX.
-
1.05
0.85
10
300
-
-
UNITS
V
V
Reverse leakage current
Junction capacitance
Series inductance
µA
pF
nH
Document Number: 93931
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
30CTH02S/30CTH02-1
Vishay High Power Products
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/µs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
26
40
2.8
6.0
37
120
MAX.
35
30
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case per diode
Weight
Mounting torque
Marking device
SYMBOL
T
J
, T
Stg
R
thJC
MIN.
- 65
-
-
-
6.0
(5.0)
Case style D
2
PAK
Case style TO-262
TYP.
-
-
2.0
0.07
-
MAX.
175
1.1
-
-
12
(10)
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
30CTH02S
30CTH02-1
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93931
Revision: 08-Sep-08
30CTH02S/30CTH02-1
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
100
100
T
J
= 175 °C
Vishay High Power Products
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0001
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93931
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
30CTH02S/30CTH02-1
Vishay High Power Products
180
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
100
I
F
= 15 A
Allowable Case Temperature (°C)
170
DC
160
150
Square
wave
(D = 0.50)
Rated
V
R
applied
See note (1)
t
rr
(ns)
V
R
= 160
V
T
J
= 125 °C
T
J
= 25 °C
15
20
25
10
100
1000
140
0
5
10
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
25
1000
I
F
= 15 A
Average Power Loss (W)
20
RMS limit
10
5
DC
0
0
5
10
15
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
Q
rr
(nC)
15
100
20
25
10
100
V
R
= 160
V
T
J
= 125 °C
T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93931
Revision: 08-Sep-08
30CTH02S/30CTH02-1
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
V
R
= 200
V
Vishay High Power Products
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93931
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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