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30CTH03PBF

Description
15 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size106KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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30CTH03PBF Overview

15 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB

30CTH03PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codecompli
Base Number Matches1
30CTH03PbF
Vishay High Power Products
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
FEATURES
Base
common
cathode
2
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
Pb-free
Available
RoHS*
COMPLIANT
TO-220AB
1
Anode
2
Common
cathode
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for AEC Q101 level
3
Anode
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
t
rr
(maximum)
I
F(AV)
V
R
36 ns
2 x 15 A
300 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
per diode
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 153 °C
T
C
= 25 °C
TEST CONDITIONS
VALUES
300
15
30
150
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 15 A
I
F
= 15 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.0
0.85
-
8
38
8
MAX.
-
1.25
0.95
40
200
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94016
Revision: 11-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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