30CTQ035S ... 30CTQ045S
30CTQ035S ... 30CTQ045S
High Temperature Schottky Rectifier – Common Cathode
Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode
Version 2013-06-04
Nominal current
Nennstrom
10.25
±0.5
2 x 15 A
35...45 V
TO-263AB
D
2
PAK
1.6 g
1.2
4.5
±
0.2
4
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
3
1.3
1
2
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
0.8
0.4
5.08
1
2
3
4
Dimensions - Maße [mm]
Standard packaging in tubes
On request taped on 13” reel
(add “R” to the part number)
Standard Lieferform in Stangen
Auf Anfrage gegurtet auf 13” Rolle
(ergänze „R“ zur Artikelnummer)
Green Molding
Halogen-Free
1
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
2
)
35
40
45
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
2
)
35
40
45
T
C
= 155°C
T
C
= 155°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V]
2
), T
j
= 25°C
I
F
= 5 A
I
F
= 15 A
< 0.62
< 0.62
< 0.62
15 A
2
)
3
)
30 A
3
)
4
)
53 A
5
)
265 A
2
)
351 A
2
s
2
)
-50...+175°C
-50...+175°C
< 0.52
< 0.52
< 0.52
I
FAV
I
FAV
I
FRM
I
FSM
i
2
t
30CTQ035S
30CTQ040S
30CTQ045S
Max. average forward current
Dauergrenzstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
S
T
j
1
2
3
4
5
From 4Q/2013 – Ab 4Q/2013
Per diode – Pro Diode
50% Duty cycle, rectangular waveform − 50% Tastverhältnis, Rechteckpuls
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
30CTQ035S ... 30CTQ045S
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Maximum Junction Capacitance
Maximale Sperrschichtkapazität
120
[%]
100
[A]
10
80
10
2
Kennwerte
T
j
= 25°C V
R
= V
RRM
T
j
= 125°C V
R
= V
RRM
I
R
R
thC
C
j
< 50 µA
typ. 15 mA
< 3.25 K/W
1
)
900 pF
1
)
10
3
T
j
= 175°C
T
j
= 125°C
60
40
1
20
I
FAV
0
0
T
C
50
100
150
[°C]
I
F
10
-1
0
V
F
0.4
T
j
= 25°C
30CTQ0xx
0.8
[V] 1.4
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. des Gehäuses
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
2
T
j
= 175°C
[mA]
T
j
= 150°C
10
T
j
= 125°C
1
T
j
= 100°C
10
-1
I
R
10
-2
T
j
= 75°C
T
j
= 50°C
T
j
= 25°C
0
V
RRM
40
60
80
100
[%]
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
1
Per diode – Pro Diode
http://www.diotec.com/
© Diotec Semiconductor AG
2
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