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30DF1Z

Description
1.66 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerETC2
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30DF1Z Overview

1.66 A, 100 V, SILICON, RECTIFIER DIODE

BL
FEATURES
Low cos t
GALAXY ELECTRICAL
30DF1
(Z)---30DF2(Z)
VOLT AGE RANGE: 100 --- 200 V
CURRENT : 3.0 A
FAST RECOVERY RECT IFIERS
DO - 27
D iffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned w ith Freon Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces ,1.15 gram s
Mounting pos ition: Any
MAXIM UM RATINGS AND ELECTRICAL CHARACTERISTICS
R atings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20% .
30
DF1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
30
DF2
200
140
200
3.0
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
100
70
100
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
F SM
200.0
A
Maximum ins tantaneous f orw ard voltage
@ 3.0A
Maximum reverse current
at rated DC bloc king voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
10.0
200.0
200
32
22
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2.Meas ured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3.Them al resis tance f rom junc tion to am bient.
www.galaxycn.com
Document Number 0261030
BL
GALAXY ELECTRICAL
1.

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30DF1Z 30DF1 30DF2 30DF2Z
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