VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 30 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed
and
qualified
JEDEC
®
-JESD 47
according
to
Available
2
3
1
TO-247AC modified
Base
cathode
2
1
TO-247AC
Base
cathode
2, 4
2
3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
3
Anode
1
Cathode
Anode
1
Anode
3
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
VS-30EPF1...
VS-30APF1...
DESCRIPTION
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-247AC modified (2 pins), TO-247AC
30 A
1000 V, 1200 V
1.41 V
350 A
95 ns
150 °C
Single die
0.6
The VS-30EPF1... and VS-30APF1... soft recovery rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
30 A, T
J
= 25 °C
1 A, 100 A/μs
CHARACTERISTICS
Sinusoidal waveform
VALUES
30
1000 to 1200
350
1.41
95
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-30EPF10PbF, VS-30APF10PbF
VS-30EPF10-M3, VS-30APF10-M3
VS-30EPF12PbF, VS-30APF12PbF
VS-30EPF12-M3, VS-30APF12-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
6
1300
I
RRM
AT 150 °C
mA
Revision: 11-Feb-16
Document Number: 93705
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
30
300
350
450
636
6360
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
30 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.41
10.09
0.992
0.1
6
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 30 A
pk
25 A/μs
25 °C
Typical
VALUES
450
6.1
2.16
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC modified
Marking device
Case style TO-247AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.8
40
0.2
6
0.21
6 (5)
12 (10)
30EPF10
30EPF12
30APF10
30APF12
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Revision: 11-Feb-16
Document Number: 93705
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
150
80
Vishay Semiconductors
Maximum Average Forward
Power Loss (W)
70
60
50
40
Maximum Allowable Case
Temperature (°C)
140
130
30.PF.. Series
R
thJC
(DC) = 0.8 K/W
180°
120°
90°
60°
30°
DC
Ø
120
110
100
60°
90
80
0
5
10
15
20
30°
Conduction angle
RMS limit
30
Ø
120°
90°
25
180°
30
35
20
10
0
0
10
20
Conduction period
30.PF.. Series
T
J
= 150 °C
30
40
50
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
350
30.PF.. Series
R
thJC
(DC) = 0.8 K/W
300
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
130
Peak Half Sine Wave
Forward Current (A)
Ø
250
200
150
100
120
110
30°
100
90
80
0
10
20
60°
90°
120°
Conduction period
180°
30
40
DC
50
50
1
30.PF.. Series
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
60
400
180°
120°
90°
60°
30°
350
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
50
40
30
20
10
0
0
5
Peak Half Sine Wave
Forward Current (A)
300
250
200
150
100
30.PF.. Series
50
0.01
RMS limit
Ø
Conduction angle
30.PF.. Series
T
J
= 150 °C
10
15
20
25
30
35
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 93705
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
1000
Vishay Semiconductors
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
30.PF.. Series
1
0
1
2
3
4
5
6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
0.6
30.PF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 5 A
I
FM
= 1 A
6
5
4
3
I
FM
= 10 A
2
1
0
I
FM
= 5 A
I
FM
= 1 A
30.PF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
0.5
0.4
0.3
0.2
0.1
0
0
50
100
150
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
1.2
1.0
30.PF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
10
30.PF.. Series
T
J
= 150 °C
0.8
0.6
0.4
0.2
0
0
50
100
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
8
I
FM
= 30 A
I
FM
= 20 A
6
4
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
2
0
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 93705
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
25
30.PF.. Series
T
J
= 25 °C
I
FM
= 30 A
35
30
30.PF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
I
rr
- Typical Reverse
Recovery Current (A)
20
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
25
20
15
10
15
10
I
FM
= 1 A
5
I
FM
= 1 A
5
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
30.PF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 93705
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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