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30ETH06-1TRRPBF

Description
30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA
CategoryDiscrete semiconductor    diode   
File Size123KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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30ETH06-1TRRPBF Overview

30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA

30ETH06-1TRRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-262AA
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, FREE WHEELING DIODE
applicationHYPERFAST SOFT RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
30ETH06SPbF/30ETH06-1PbF
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED Pt
TM
FEATURES
30ETH06SPbF
30ETH06-1PbF
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 125 °C operating junction temperature
Available
RoHS*
COMPLIANT
Base
cathode
2
2
• Dual diode center tap
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION/APPLICATIONS
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
28 ns
30 A
600 V
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 103 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
30
200
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.34
0.3
60
33
8.0
MAX.
-
2.6
1.75
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94020
Revision: 26-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

30ETH06-1TRRPBF Related Products

30ETH06-1TRRPBF 30ETH06-1TRLPBF 30ETH06SPBF
Description 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
Is it Rohs certified? conform to conform to conform to
Parts packaging code TO-262AA TO-262AA TO-263
package instruction R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
Contacts 3 3 3
Reach Compliance Code compli unknow unknow
Other features HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE
application HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
Maximum non-repetitive peak forward current 200 A 200 A 200 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 3 3 2
Maximum operating temperature 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum output current 30 A 30 A 30 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 600 V 600 V
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO YES
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 30
Base Number Matches 1 1 1
Is it lead-free? Lead free Lead free -
JEDEC-95 code TO-262AA TO-262AA -
Humidity sensitivity level - NOT SPECIFIED 1
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