1N3673A datasheet, PDF - EEWORLD Datasheet

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1N3673A: DescriptionDiode Switching 1KV 22A 2-Pin DO-4; CategoryDiscrete semiconductor diode; File Size46KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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1N3673A Overview

Diode Switching 1KV 22A 2-Pin DO-4

1N3673A Parametric

Parameter Name	Attribute value
package instruction	DO-4, 1 PIN
Reach Compliance Code	unknow
application	POWER
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.3 V
JEDEC-95 code	DO-203AA
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	240 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	12 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	5 µA
Reverse test voltage	1000 V
surface mount	NO
technology	AVALANCHE
Terminal form	SOLDER LUG
Terminal location	UPPER
Base Number Matches	1

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<Ss.mi-Condu.ctoi ZPioduoti, (Jnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

Silicon Avalanche

Power Rectifiers

1N1202A-1N1206A

1N3671A-1N3673A

DIr

n. Inches

A

B

C

D

£

F

G

H

J

M

N

P

Millimeter

Minimum Maximum Minimum

Maximum Notes

1

.424

Notes:

1. 10-32 UNF3A

2. Full threads within

2

1/2

threads

3. Standard Polarity Stud is

Cathode

Reverse Polarity: Stud is

Anode

.422

.075

.163

.100

.020

.070

.437

.505

.800

.453

.175

.405

.189

.140

.350

.065

.100

10.77

10.72

1.91

4.15

2.54

—~

.510

1.78

11.10

12.83

20.32

11,51

4.44

10.29

4.80

3.56

8.89 .

1.65

2.54

2

Dia

D0203AA (D04)

Number

Standard

1N1202A

1N1204A

1N1206A

1N3671A

1N3673A

Reverse

1N1202AR

1N1204AR

1N1206AR

1N3671AR

1N3673AR

200V

400V

600V

800V

1000V

Peak Reverse

Voltage

• MIL-PRF-19500/260

• Glass passivated die

• Glass to metal seal construction

• 240 Amps surge rating

•

V

RRM to 1000 volts

Electrical Characteristics

Average forward current

Maximum surge current

Max l * t for fusing

Max peak forward voltage

Max peak reverse current

Max Recommended Operating Frequency

IF(AV)l2 Amps

IFSM 240 Amps

l

z

t 240 A

2

s

V

FM 1.35 Volts

V

FM 2.30 Volts

RM

5 juA

'RM 1.0 rnA

10kHz

TC - 150°C, half sine wave,

R

8JC = 2.0'C/W

8.3ms. half sine.

T

C - 200'C

IFM = 38A;Tj = 25°C*

IFM = 240A:Tj = 25-0

VRRM.TJ - 25°c

VRRM.TJ = iso°c

*Pulse test: Pulse width 300 /usec. Duty cyde 2%

Thermal and Mechanical Characteristics

Storage temperature range

Operating case temp range

Maximum thermal resistance

Mounting torque

Weight

TSTG

TC

R

8JC

-65'C to 200*0

-65*C to 150'C

2.0° C/W Junction to Cose

15 inch pounds maximum

.16 ounces (5.0 grams) typical

1N3673A Related Products

	1N3673A	1N1202AR	1N1206AR	1N3671AR	1N3673AR	1N1204AR	1N3671A
Description	Diode Switching 1KV 22A 2-Pin DO-4	Diode Switching 200V 12A 2-Pin DO-4	Diode Switching 600V 12A 2-Pin DO-4	Diode Switching 800V 22A 2-Pin DO-4	Diode Switching 1KV 22A 2-Pin DO-4	Diode Switching 400V 12A 2-Pin DO-4	Diode Switching 800V 22A 2-Pin DO-4
package instruction	DO-4, 1 PIN	DO-4, 1 PIN	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	DO-4, 1 PIN
Reach Compliance Code	unknow	unknow	unknown	unknown	unknown	unknown	unknown
application	POWER	POWER	POWER	POWER	POWER	POWER	POWER
Shell connection	CATHODE	ANODE	ANODE	ANODE	ANODE	ANODE	CATHODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
JEDEC-95 code	DO-203AA	DO-203AA	DO-203AA	DO-203AA	DO-203AA	DO-203AA	DO-203AA
JESD-30 code	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	240 A	240 A	240 A	240 A	240 A	240 A	240 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	1	1	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	12 A	12 A	12 A	12 A	12 A	12 A	12 A
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	1000 V	200 V	600 V	800 V	1000 V	400 V	800 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Reverse test voltage	1000 V	200 V	600 V	800 V	1000 V	400 V	800 V
surface mount	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Base Number Matches	1	1	1	1	1	1	-
Maker	-	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
Is Samacsys	-	-	N	N	N	N	-

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