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31GF6

Description
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size65KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

31GF6 Overview

3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

31GF6 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
Maximum non-repetitive peak forward current90 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
Base Number Matches1
31GF6
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
3.0 A
600 V
90 A
30 ns
1.6 V
150 °C
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current,
0.375" (9.5 mm) lead length at T
L
= 110 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Reverse avalanche energy (8/20 μs surge)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
E
AR
VALUE
600
420
600
3.0
90
- 40 to + 150
10
UNIT
V
V
V
A
A
°C
mJ
Document Number: 88530
Revision: 23-Oct-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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