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32CTQ025-1TRR

Description
30 A, 25 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size126KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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32CTQ025-1TRR Overview

30 A, 25 V, SILICON, RECTIFIER DIODE, TO-262AA

32CTQ...S/32CTQ...-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
32CTQ...S
32CTQ...-1
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
The 32CTQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
25/30 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
25/30
900
0.40
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
32CTQ025S
32CTQ025-1
25
32CTQ030S
32CTQ030-1
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 115 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
900
250
13
3
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93961
Revision: 21-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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Description 30 A, 25 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 25 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 25 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 25 V, SILICON, RECTIFIER DIODE 30 A, 25 V, SILICON, RECTIFIER DIODE 30 A, 25 V, SILICON, RECTIFIER DIODE 30 A, 25 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 25 V, SILICON, RECTIFIER DIODE, TO-262AA

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