Power Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
| Parameter Name | Attribute value |
| Maker | YAGEO |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | HIGH VOLTAGE |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 200 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JESD-30 code | R-PSSO-F3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 15 MHz |