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ZC821A

Description
Variable Capacitance Diode, 15pF C(T), 25V, Silicon, Hyperabrupt, TO-92 COMPATIBLE, E-LINE PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size66KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

ZC821A Overview

Variable Capacitance Diode, 15pF C(T), 25V, Silicon, Hyperabrupt, TO-92 COMPATIBLE, E-LINE PACKAGE-2

ZC821A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionO-PBCY-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio5
Nominal diode capacitance15 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-PBCY-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Maximum power dissipation0.3 W
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage25 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Varactor Diode ClassificationHYPERABRUPT

ZC821A Preview

SILICON ION-IMPLANTED
HYPERABRUPT TUNER DIODES
ISSUE 2 – MARCH 94
ZC820
SERIES
DIODE PIN CONNECTION
1
1
CATHODE
2
ANODE
2
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Reverse Voltage
Forward Current
Power Dissipation at T
amb
=25°C
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
I
F
P
tot
T
j
T
stg
MAX
25
200
300
125
-55 to +200
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C)
PARAMETER
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
SYMBOL MIN
I
R
η
TYP
MAX
0.02
UNIT CONDITIONS
µ
A
0.03
0.04
%/°C
V
R
=3V
TUNING CHARACTERISTICS (at T
amb
=25°C)
PART
NO
MIN
ZC820
ZC821
ZC822
ZC823
ZC824
ZC825
ZC826
8
12
17.6
26.4
37.6
54.4
80
Nominal Capacitance
in pF
@ V
R
=2V, f=1MHz
NOM
10
15
22
33
47
68
100
MAX
12
18
26.4
39.6
56.4
81.6
120
Minimum
Q
@ V
R
=3V
f=50MHz
300
300
200
200
200
100
100
Capacitance Ratio
C
2
/C
20
,
at f=1MHz
MIN
5
5
5
5
5
5
5
MAX
6.5
6.5
6.5
6.5
6.5
6.5
6.5
*Available with 2V nominal capacitance
±
10 suffix A,
±
5% suffix B
3-107
ZC820
SERIES
200
100
Diode Capacitance (pF)
10
826
825
824
823
822
821
820
1
1
10
100
Reverse
Voltage (Volts)
Diode Capacitance
3-108
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