BLF242 datasheet, PDF - EEWORLD Datasheet

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BLF242: DescriptionRF Power Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size31KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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BLF242 Overview

RF Power Field-Effect Transistor

BLF242 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	,
Reach Compliance Code	unknow

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BLF242

HF-VHF POWER MOSFET

N-Channel Enhancement Mode

DESCRIPTION:

The

ASI BLF242

is intended for use

in 28 VDC large signal Applications.

PACKAGE STYLE .380 4L FLG

.112 x 45°

FEATURES INCLUDE:

•

= 16 dB Typical at 175 MHz

•

Omnigold™

Metalization System

•

Class-B

Ø.125 NOM.

FULL R

.125

MAXIMUM RATINGS

DISS

STG

1.0 A

DIM

MINIMUM

inches / mm

MAXIMUM

inches / mm

65 V

±20

16 W @ T

≤

25 °C

-65 °C to +200 °C

-65 °C to +150 °C

11 °C/W

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.004 / 0.10

.085 / 2.16

.160 / 4.06

.240 / 6.10

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

CHARACTERISTICS

SYMBOL

DSS

GSS

GS(th)

DSon

DSX

= 25 °C

NONE

TEST CONDITIONS

= 100 µA

= 28 V

= 0 V

= 3.0 mA

= 300 mA

= 10 V

= 28 V

= 0 V

= ±20 V

= 10 V

= 1.0 V

= 10 V

= 0 V

f = 1.0 MHz

MINIMUM

TYPICAL MAXIMUM UNITS

1.0

4.5

0.24

3.3

1.2

9.4

1.7

µA

mho

Ω

2.0

.16

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1202

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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