AP65111
TSOT26 LIGHT LOAD IMPROVED 1.5A SYNCH DC-DC BUCK CONVERTER
Description
The AP65111 is an internally compensated synchronous DC-DC buck
converter with a 500kHz switching frequency. It is integrated with high
and low-side MOSFETs with low R
DS(ON)
.
The AP65111 enables continuous load current of up to 1.5A with
efficiency as high as 97%.
The AP65111 implements an automatic custom light-load efficiency
improvement algorithm.
The AP65111 features current mode control operation, which enables
fast transient response times and easy loop stabilization.
The AP65111 simplifies board layout and reduces space
requirements with its high level of integration and minimal need for
external components, making it ideal for distributed power
architectures.
The AP65111 is available in a standard Green TSOT26 package and
is RoHS compliant.
Pin Assignments
Top View
IN
1
6
FB
GND
2
5
EN
SW
3
4
BST
TSOT26
Features
V
IN
4.5V to 16V
1.5A Continuous Output Current
Efficiency Up to 97%
Automated Light-Load improvement
V
OUT
Adjustable from 0.8V
500kHz Switching Frequency
Internal Soft-Start
Enable Pin
Overvoltage Protection & Undervoltage Protection
Overcurrent Protection (OCP) with Hiccup
Thermal Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Gaming Consoles
Flat-Screen TV Sets and Monitors
Set-Top-Boxes
Distributed Power Systems
Home Audio
Consumer Electronics
Network Systems
FPGA, DSP and ASIC Supplies
Green Electronics
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Typical Applications Circuit
INPUT
V
IN
12V
1
IN
4
BST
C5
1µF
2
SW
L1
6.5μH
OUTPUT
V
OUT
3.3V
R1
40.2kΩ
ON
OFF
5
EN
AP65111
6
FB
R3
59kΩ
VIN=4.7V
VIN=12V
VIN=16V
C1
22μF
R2
13kΩ
C2
22μF
3
GND
Figure 1 Typical Application Circuit
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AP65111
Document number: DS39153 Rev. 1 - 2
October 2016
© Diodes Incorporated
AP65111
Pin Descriptions
Pin
Name
IN
SW
GND
BST
EN
FB
Pin Number
TSOT26
1
2
3
4
5
6
Function
Power Input. IN supplies the power to the IC, as well as the step-down converter switches. Drive IN with a 4.5V to
16V power source. Bypass IN to GND with a suitably large capacitor to eliminate noise on the input to the IC. See
Input Capacitor on Page 10.
Power Switching Output. SW is the switching node that supplies power to the output. Connect the output LC filter
from SW to the output load. Note that a capacitor is required from SW to BS to power the high-side switch.
Ground
High-Side Gate Drive Boost Input. BS supplies the drive for the high-side N-Channel MOSFET a 0.01µF or greater
capacitor from SW to BS to power the high-side switch.
Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the regulator; low to
turn it off. Attach to IN with a 100kΩ pull up resistor for automatic startup.
Feedback Input. FB senses the output voltage and regulates it. Drive FB with a resistive voltage divider connected
to it from the output voltage. The feedback threshold is 0.8V. See Setting the Output Voltage on Page 9.
Functional Block Diagram
5
EN
Internal
Reference
0.4V
0.8V
1.1V
Vcc
Regulator
+
-
+
-
OVP
1
IN
1.1V
S
E
=0.9V/T
6
FB
R
T
=0.22V/A
UVP
0.4V
Oscillator
500kHz
+
4
BST
1pF
OCP
Ref
62pF
0.8V
650k
Internal SS
-
+
+
Error
Amplifier
+
-
PWM
Comparator
Logic
2
SW
AP65111
Document number: DS39153 Rev. 1 - 2
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+
-
3
GND
October 2016
© Diodes Incorporated
AP65111
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.) (Note 4)
Symbol
V
IN
V
SW
V
BS
V
FB
V
EN
T
ST
T
J
Supply Voltage
Switch Node Voltage
Bootstrap Voltage
Feedback Voltage
Enable/UVLO Voltage
Storage Temperature
Junction Temperature
Parameter
Rating
-0.3 to 20
-1.0 to V
IN
+0.3
V
SW
-0.3 to V
SW
+6.0
-0.3V to +6.0
-0.3V to +6.0
-65 to +150
+160
+260
2
1
Unit
V
V
V
V
V
°C
°C
°C
kV
kV
Lead Temperature
T
L
ESD Susceptibility
(Note 5)
HBM
CDM
Notes:
Human Body Model
Charged Device Model
4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Thermal Resistance
(Note 6)
Symbol
θ
JA
θ
JC
Note:
Parameter
Junction to Ambient
Junction to Case
TSOT26
TSOT26
Rating
120
30
Unit
°C/W
°C/W
6. Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.) (Note 7)
Symbol
V
IN
T
A
Note:
Parameter
Supply Voltage
Operating Ambient Temperature Range
Min
4.5
-40
Max
16
+85
Unit
V
°C
7. The device function is not guaranteed outside of the recommended operating conditions.
AP65111
Document number: DS39153 Rev. 1 - 2
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October 2016
© Diodes Incorporated
AP65111
Electrical Characteristics
Symbol
I
SHDN
I
Q
R
DS(ON)1
R
DS(ON)2
I
LIMIT_PEAK
I
SW_LKG
F
SW
D
MAX
T
ON
V
FB
V
EN_RISING
V
EN_FALLING
I
EN
INUV
VTH
INUV
HYS
T
SS
T
SHDN
T
HYS
Note:
(@T
A
= +25°C, V
IN
= 12V, unless otherwise specified.)
Test Conditions
V
EN
= 0V
V
EN
= 2.0V, V
FB
= 0.85V
—
—
Minimum Duty Cycle
V
EN
= 0V, V
SW
= 12V
V
FB
= 0.75V
V
FB
= 700mV
—
T
A
= -40°C to +85°C
—
—
V
EN
= 2V
V
EN
= 0V
—
—
—
—
—
Min
—
—
—
—
2.5
—
400
88
—
776
1.4
1.23
—
—
3.7
—
—
—
—
0.8
200
120
3.0
—
500
92
90
800
1.5
1.32
2.85
0
4.05
250
1
+160
+20
Typ
Max
1.0
—
—
—
—
1
600
—
—
824
1.6
1.41
—
—
4.4
—
—
—
—
Unit
µA
mA
mΩ
mΩ
A
μA
kHz
%
ns
mV
V
V
μA
μA
V
mV
ms
°C
°C
Parameter
Shutdown Supply Current
Supply Current (Quiescent)
High-Side Switch On-Resistance (Note 8)
Low-Side Switch On-Resistance (Note 8)
HS Peak Current Limit (Note 8)
Switch Leakage Current
Oscillator Frequency
Maximum Duty Cycle
Minimum On-Time
Feedback Voltage
EN Rising Threshold
EN Falling Threshold
EN Input Current
V
IN
Undervoltage Threshold Rising
V
IN
Undervoltage Threshold Hysteresis
Soft-Start Period
Thermal Shutdown (Note 8)
Thermal Hysteresis (Note 8)
8. Guaranteed by design.
AP65111
Document number: DS39153 Rev. 1 - 2
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October 2016
© Diodes Incorporated
AP65111
Typical Performance Characteristics
(@T
A
= +25°C, V
IN
= 12V, V
OUT
= 3.3V, L = 6.5µH, unless otherwise specified)
VIN=6.5V
VIN=12V
VIN=16V
VIN=12V
VIN=4.7V
VIN=16V
VIN=4.7V
VIN=4.7V
VIN=12V
VIN=16V
VIN=16V
VIN=12V
AP65111
Document number: DS39153 Rev. 1 - 2
5 of 14
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October 2016
© Diodes Incorporated
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