BCY79 datasheet, PDF - EEWORLD Datasheet

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BCY79: Description200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18; CategoryDiscrete semiconductor The transistor; File Size76KB，1 Pages; ManufacturerDiodes Incorporated

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BCY79 Overview

200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18

BCY79 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Diodes Incorporated
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	PNP
Maximum power consumption environment	1 W
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Maximum off time (toff)	800 ns
Maximum opening time (tons)	150 ns
VCEsat-Max	0.25 V

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BCY79 Related Products

	BCY79	BC160	ZT187
Description	200mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18	1000mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	1 A	0.5 A
Collector-emitter maximum voltage	45 V	40 V	25 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	40	75
JEDEC-95 code	TO-18	TO-39	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	175 °C	175 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	235	235	235
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.6 W	3.7 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Guideline	CECC	CECC	CECC
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	50 MHz	150 MHz
VCEsat-Max	0.25 V	1 V	0.2 V
Other features	LOW NOISE	-	LOW NOISE
Maximum power consumption environment	1 W	3.7 W	-

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