DMC2038LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
BV
DSS
20V
-20V
R
DS(ON)
35mΩ @ V
GS
= 4.5V
56mΩ @ V
GS
= 1.8V
74mΩ @ V
GS
= -4.5V
168mΩ @ V
GS
= -1.8V
I
D
T
A
= +25°
C
4.5A
3.5A
-3.1A
-2.0A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
NEW PRODUCT
Q2
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections Indicator: See Diagram
Weight: 0.013 grams (Approximate)
Q1
D1
Q2
D2
Applications
Motor Control
Power Management Functions
DC-DC Converters
Backlighting
TSOT26
G1
S2
G2
1
2
3
6
5
4
D1
S1
G1
D2
G2
Top View
Top View
Pin Configuration
S1
S2
N-Channel
P-Channel
Ordering Information
(Note 5)
Part Number
DMC2038LVT-7
DMC2038LVTQ-7
Notes:
Compliance
Standard
Automotive
Case
TSOT26
TSOT26
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
31C = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
31C
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
Feb
2
2018
F
Mar
3
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
Jul
7
2021
I
Aug
8
Sep
9
2022
J
Oct
O
Nov
N
2023
K
Dec
D
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
1 of 10
www.diodes.com
November 2017
© Diodes Incorporated
DMC2038LVT
Maximum Ratings N-CHANNEL – Q1
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
20
±12
3.7
3.0
4.1
3.2
4.5
3.6
5.2
4.2
1.5
25
Unit
V
V
A
A
A
A
A
A
NEW PRODUCT
Continuous Drain Current (Note 6) V
GS
= 4.5V
Continuous Drain Current (Note 7) V
GS
= 4.5V
Maximum Ratings P-CHANNEL – Q2
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
-20
±12
-2.6
-2.1
-2.9
-2.4
-3.1
-2.5
-3.8
-3.0
-1.5
-17
Unit
V
V
A
A
A
A
A
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Continuous Drain Current (Note 7) V
GS
= -4.5V
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Notes:
Symbol
T
A
= +25°
C
T
A
= +70°
C
Steady State
t<10s
T
A
= +25°
C
T
A
= +70°
C
Steady State
t<10s
P
D
R
JA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.8
0.5
168
120
1.1
0.7
114
72
39
-55 to +150
Units
W
°
C/W
W
°
C/W
°
C
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
2 of 10
www.diodes.com
November 2017
© Diodes Incorporated
DMC2038LVT
Electrical Characteristics N-CHANNEL – Q1
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @T
C
= +25°
C
Gate-Source Leakage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
20
—
—
0.4
—
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Typ
—
—
—
—
27
33
43
9
—
400
70
65
1.9
5.7
12
0.7
1.4
5
8
25
8
Max
—
1.0
±100
1.0
35
43
56
—
1.1
530
90
100
—
—
17
—
—
10
16
40
16
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 4.0A
V
GS
= 2.5V, I
D
= 2.5A
V
GS
= 1.8V, I
D
= 1.5A
V
DS
= 5V, I
D
= 3.4A
V
GS
= 0V, I
S
= 1A
NEW PRODUCT
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
—
—
—
0.4
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, I
D
= 5.8A
V
DS
= 10V, V
GS
= 4.5V,
R
G
= 6Ω, I
DS
= 1A
30
V
GS
=10V
V
GS
=4.5V
V
GS
=3.0V
V
GS
=4.0V
20
V
DS
= 5.0V
T
A
= -55
C
T
A
= 85
C
T
A
= 150
C
T
A
= 25
C
25
I
D
, DRAIN CURRENT (A)
20
V
GS
=3.5V
V
GS
=2.5V
I
D
, DRAIN CURRENT (A)
15
T
A
= 125
C
15
V
GS
=2.0V
10
10
5
5
V
GS
=1.5V
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
V
GS
, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
3 of 10
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November 2017
© Diodes Incorporated
DMC2038LVT
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
I
D
, DRAIN SOURCE CURRENT
(A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
V
GS
= 1.8V
0.08
V
GS
= 4.5V
T
A
= 150
C
T
A
= 125
C
0.06
NEW PRODUCT
0.04
T
A
= 85
C
T
A
= 25
C
V
GS
= 2.5V
V
GS
= 4.5V
0.02
T
A
= -55
C
0
0
4
8
12
16
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
1.7
0.06
V
GS
=5V
I
D
=5A
1.5
0.05
1.3
0.04
1.1
0.03
V
GS
=10V
I
D
=10A
0.9
0.02
0.7
0.01
0.5
-50
-25
0
25
50
75
100
125
150
0
-50
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 6 On-Resistance Variation with Temperature
1.5
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
1
V
D
L
O
H
S
E
R
H
T
E 0.5
T
A
G
,
H
)
V
T
(
S
G
20
18
I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
4
2
T
A
= 25
C
I
D
=1mA
I
D
=250µA
0
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
4 of 10
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-25
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
November 2017
© Diodes Incorporated
DMC2038LVT
1000
f = 1MHz
10
C
T
, JUNCTION CAPACITANCE (pF)
NEW PRODUCT
)
F
p
(
E
C
N
A
T
I
C
A
P
A 100
C
N
O
I
T
C
N
U
J
,
T
C
10
0
V
GS
, GATE-SOURCE VOLTAGE (V)
C
iss
8
V
DS
=15V
6
C
oss
C
rss
4
2
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
20
0
2
4
6
8
10
12
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
14
100
10
)
A
(
T
N
E
R
R
DC
U
1
C
P
W
= 10s
N
P
W
= 1s
I
A
P
W
= 100ms
R
D
P
W
= 10ms
,
D
P
W
= 1ms
I 0.1
T
= 150°
C
P = 100µs
J(max)
T
A
= 25°
C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
0.01
W
R
DSON)
Limited
I
D
, DRAIN CURRENT (A)
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
1
100
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
JA
(t) = r(t) * R
θJA
R
θJA
(t) = r(t) * R
JA
R
JA
= 164℃/W
R
θJA
= 164癈 /W
Duty Cycle, D = t1 t2
Duty Cycle, D = t1/
/
t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
Fig. 12 Transient Thermal Resistance
10
100
1,000
0.001
0.00001
0.0001
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
5 of 10
www.diodes.com
November 2017
© Diodes Incorporated
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