DMP2035UVT
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
35mΩ @ V
GS
= -4.5V
-20V
45mΩ @ V
GS
= -2.5V
-5.2A
I
D
T
A
= 25°C
-6.0A
Features and Benefits
•
•
•
•
•
•
•
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
ESD protected Up To 3KV
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
•
DC-DC Converters
Motor Control
Power management functions
Analog Switch
Mechanical Data
•
•
•
•
•
•
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – MatteTin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0013 grams (approximate)
Drain
TSOT26
D
D
G
1
2
3
6
5
4
D
D
S
Gate
Gate
Protection
Diode
Source
ESD PROTECTED TO 3kV
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 3)
Part Number
DMP2035UVT-7
DMP2035UVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
20P
20P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
March 2012
© Diodes Incorporated
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
1 of 6
www.diodes.com
DMP2035UVT
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
-20
±12
-6.0
-4.8
-7.2
-5.7
-5.2
-4.1
-6.2
-4.9
-2.0
-24
Units
V
V
A
A
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Continuous Drain Current (Note 5) V
GS
= -2.5V
Thermal Characteristics
Total Power Dissipation (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
P
D
Steady State
t<10s
Steady State
t<10s
Steady State
R
θ
JA
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
1.2
106
74
2.0
65
46
11.8
-55 to 150
Units
W
°C/W
W
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
△
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
V
GS(th)
/
△
T
J
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-20
⎯
⎯
-0.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
-0.7
2.5
23
30
41
18
-0.7
1610
157
145
9.4
15.4
2.5
3.3
17
12
94
42
14
4
Max
⎯
-1
±10
-1.5
⎯
35
45
62
⎯
-1.0
2400
210
200
14.1
23.1
⎯
⎯
33
19
150
64
25
8
Unit
V
µA
µA
V
mV/°C
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±8V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
I
D
= -250μA , Referenced to 25°C
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -2.5V, I
D
= -4.0A
V
GS
= -1.8V, I
D
= -2.0A
V
DS
= -5V, I
D
= -5.5A
V
GS
= 0V, I
S
= -1A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -10V, V
GS
= -4.5V
I
D
= -4A
pF
Ω
nC
ns
V
GS
= -4.5V, V
DS
= -10V, R
G
= 6Ω,
I
D
= -1A, R
L
= 10Ω
ns
nC
I
F
=-4.5A, di/dt=100A/µS
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMP2035UVT
25
V
GS
= 8.0V
V
GS
= 4.5V
20
V
DS
= -5.0V
20
-I
D
, DRAIN CURRENT (A)
V
GS
= 2.0V
15
V
GS
= 3.2V
V
GS
= 3.0V
V
GS
= 2.5V
-I
D
, DRAIN CURRENT (A)
V
GS
= 3.5V
15
10
10
5
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
5
V
GS
= 1.5V
0
0
1
2
3
4
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
5
0
0
T
A
= -55
°
C
0.5
1.0
1.5
2.0
2.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3.0
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.07
0.05
V
GS
= -4.5V
0.06
0.04
T
A
= 150
°
C
0.05
T
A
= 125
°
C
T
A
= 85
°
C
0.03
0.04
T
A
= 25
°
C
0.02
0.03
T
A
= -55
°
C
0.02
0.1
1
10
-I
D
, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
100
0.01
0
4
8
12
16
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
1.5
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
0.06
0.05
V
GS
= -2.5V
I
D
= -5A
1.3
0.04
1.1
0.03
V
GS
= -4.5V
I
D
= -10A
0.9
0.7
0.5
-50
0.02
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 5 On-Resistance Variation with Temperature
0.01
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
3 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMP2035UVT
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
1.0
20
18
16
-I
S
, SOURCE CURRENT (A)
0.8
14
12
10
8
6
4
2
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
T
A
= 150°C
0
0
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100,000
T
A
= 150°C
-I
DSS
, LEAKAGE CURRENT (nA)
-I
GSS
, LEAKAGE CURRENT (nA)
1,000
T
A
= 125°C
10,000
T
A
= 125°C
1,000
T
A
= 85°C
100
T
A
= 85°C
100
T
A
= 25°C
T
A
= -55°C
10
T
A
= -55°C
T
A
= 25°C
10
4
6
8
10 12 14 16 18 20
-V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
10,000
f = 1MHz
1
1
2
4
6
8
10
-V
GS
, GATE-SOURCE VOLTAGE(V)
Fig. 10 Typical Gate-Source Leakage Current vs. Voltage
2
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
C
T
, JUNCTION CAPACITANCE (pF)
8
C
iss
6
1,000
4
C
oss
C
rss
2
100
0
2
6
8 10 12 14 16 18 20
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Junction Capacitance
4
0
0
4
8 12 16 20 24 28 32 36 40
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 12 Gate-Charge Characteristics
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
4 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMP2035UVT
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θJA
= 88°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
D
e1
E1
E
c
4x
θ
1
6x b
L
θ
L2
e
A
A2
A1
TSOT26
Dim Min Max Typ
A
1.00
−
−
A1
0.01 0.10
−
A2
0.84 0.90
−
D
2.90
−
−
E
2.80
−
−
E1
1.60
−
−
b
0.30 0.45
−
c
0.12 0.20
−
e
0.95
−
−
e1
1.90
−
−
L
0.30 0.50
L2
0.25
−
−
θ
0°
8°
4°
θ1
4°
12°
−
All Dimensions in mm
Suggested Pad Layout
C
C
Y1
Y (6x)
X (6x)
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
5 of 6
www.diodes.com
March 2012
© Diodes Incorporated
stm32/stm8
京公网安备 11010802033920号
EEWORLD
