DMS2085LSD-13 datasheet, PDF - EEWORLD Datasheet

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DMS2085LSD-13: DescriptionSmall Signal Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size296KB，7 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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DMS2085LSD-13 Overview

Small Signal Field-Effect Transistor,

DMS2085LSD-13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	SOP-8
Reach Compliance Code	compli
ECCN code	EAR99
Factory Lead Time	15 weeks
Samacsys Descripti	Diodes Inc DMS2085LSD-13 P-channel MOSFET Transistor w/Int Schottky -20Vbr 20Vr , 4.3 A, 20 V, 8-Pin SO
Other features	FAST SWITCHING
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	4.3 A
Maximum drain-source on-resistance	0.085 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	41 pF
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	1.8 W
Maximum pulsed drain current (IDM)	11.2 A
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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DMS2085LSD

P-CHANNEL ENHANCEMENT MODE MOSFET

WITH INTEGRATED SCHOTTKY DIODE

Product Summary

ADVANCE INFORMATION

NEW PRODUCT

(BR)DSS

-20V

20V

MOSFET

DS(on) max

85mΩ @ V

= -10V

125mΩ @ V

= -4.5V

SCHOTTKY DIODE

F max

400mV @ I

= 0.5A

470mV @ I

= 1.0A

-3.3A

-2.8A

1.0A

Features and Benefits

•

Low Input Capacitance

MOSFET with Low R

DS(ON)

– Minimize Conduction Losses

Schottky Diode with Low Forward Voltage Drop

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish – Matte Tin annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

Weight: 0.074 grams (approximate)

Applications

•

DC-DC Converters

Power Management Functions

Backlighting

Q1 P-Channel MOSFET

Top View

Internal Schematic

D1 Schottky Diode

Ordering Information

(Note 4)

Part Number

DMS2085LSD-13

Notes:

Case

SO-8

Packaging

2,500/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

S2085LD

YY WW

S2085LD

YY WW

= Manufacturer’s Marking

S2085LD = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 13 = 2013)

WW = Week (01 - 53)

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Chengdu A/T Site

Shanghai A/T Site

DMS2085LSD

Document number: DS36926 Rev. 2 - 2

1 of 7

www.diodes.com

August 2014

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