DMTH3002LPS-13 datasheet, PDF - EEWORLD Datasheet

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DMTH3002LPS-13: DescriptionPower Field-Effect Transistor, 100A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size432KB，7 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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DMTH3002LPS-13 Overview

Power Field-Effect Transistor, 100A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

DMTH3002LPS-13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Reach Compliance Code	_compli
ECCN code	EAR99
Factory Lead Time	24 weeks
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	700 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.0025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
JESD-609 code	e3
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	150 A
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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Green

DMTH3002LPS

30V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

PowerDI

Product Summary

DSS

30V

DS(ON)

1.6mΩ @ V

= 10V

= +25°C

240A

Features



Thermally Efficient Package – Cooler Running Applications

<1.1mm Package Profile – Ideal for Thin Applications

High Conversion Efficiency

Low R

DS(ON)

– Minimizes On-State Losses

Low Input Capacitance

Fast Switching Speed

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation N-Channel Enhancement Mode MOSFET is

designed to minimize R

DS(ON),

yet maintain superior switching

performance. This device is ideal for use in power management and

load switch.

Applications



DC-DC Converters

Load Switch

Mechanical Data



PowerDI5060-8 (Type K)

Case: PowerDI5060-8 (Type K)

Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Finish - Matte Tin Annealed over Copper Leadframe;

Solderable per MIL-STD-202, Method 208

Weight: 0.097 grams (Approximate)

Pin1

Top View

Bottom View

Internal Schematic

Top View

Pin Configuration

Ordering Information

(Note 4)

Part Number

DMTH3002LPS-13

Notes:

Case

PowerDI5060-8 (Type K)

Packaging

2,500/Tape & Reel

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

PowerDI5060-8 (Type K)

= Manufacturer’s Marking

H3002LS = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 17 = 2017)

WW = Week Code (01 to 53)

H3002LS

YY WW

PowerDI is a registered trademark of Diodes Incorporated.

1 of 7

www.diodes.com

May 2017

DMTH3002LPS

Document number: DS38282 Rev. 4 - 2

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