DSS2540M
40V LOW V
CE(sat)
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Low Collector-Emitter Saturation Voltage, V
CE(sat)
Ultra-Small Leadless Surface Mount Package
ESD: HBM 8kV, MM 400V
Complementary PNP Type Available (DSS3540M)
“Lead Free”, RoHS Compliant (Note 1)
Halogen, and Antimony Free. "Green" Device (Note 2)
Mechanical Data
•
•
•
•
•
Case: DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0009 grams (Approximate)
DFN1006-3
C
B
B
C
E
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 3)
Product
DSS2540M-7
DSS2540M-7B
Notes:
Marking
TC
TC
Reel size (inches)
7
7
Tape width (mm)
8mm
8mm
Quantity per reel
3,000
10,000
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DSS2540M-7
DSS2540M-7B
TC
Top View
Dot Denotes Collector Side
TC
Top View
Denotes Base and Emitter Side
Bar
TC = Product Type Marking Code
DSS2540M
Document number: DS31820 Rev. 3 - 2
1 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS2540M
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Value
40
40
6
500
1
100
Unit
V
V
V
mA
A
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 500°C/W
P(pk)
t
1
0.01
D = 0.02
D = 0.01
D = 0.005
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t
1
, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
100
1,000
10,000
1,000
P(pk), PEAK TRANSIENT POWER (W)
Single Pulse
0.30
100
T
J
- T
A
= P * R
θ
JA
(t)
P
D
, POWER DISSIPATION (W)
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 500°C/W
0.25
0.20
10
0.15
0.10
1
0.05
R
θJA
= 500°C/W
0.1
1E-06
0.0001
0.01
1
100
10,000
t
1
, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
50
100
150
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
0
0
DSS2540M
Document number: DS31820 Rev. 3 - 2
2 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS2540M
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
40
40
6
⎯
⎯
200
150
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
250
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
300
Max
⎯
⎯
⎯
100
50
100
⎯
⎯
⎯
50
100
200
250
500
1.2
1.1
6
⎯
Unit
V
V
V
nA
μA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 150°C
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 10mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 200mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 2V, I
C
= 100mA
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 100mA, f = 100MHz
h
FE
⎯
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
V
CE(sat)
R
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
mV
mΩ
V
V
pF
MHz
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
1.00
I
B
= 5mA
1,000
900
800
I
B
= 4mA
I
B
= 3mA
I
C
, COLLECTOR CURRENT (A)
0.80
h
FE
, DC CURRENT GAIN
T
A
= 150°C
700
600
500
400
300
200
100
T
A
= -55°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.60
I
B
= 2mA
0.40
I
B
= 1mA
0.20
0
0
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
DSS2540M
Document number: DS31820 Rev. 3 - 2
3 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS2540M
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1
I
C
/I
B
= 20
1.0
I
C
/I
B
= 20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.8
T
A
= -55°C
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.6
T
A
= 25°C
T
A
= 85°C
0.4
T
A
= 150°C
T
A
= 125°C
0.01
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.2
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
CE
= 2V
1,000
I
C
/I
B
= 20
-R
CE(SAT)
, COLLECTOR-EMITTER
SATURATION RESISTANCE (
Ω
)
100
10
T
A
= -55°C
0.3
0.2
0.1
0
0.1
T
A
= 150°C
T
A
= 125°C
1
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C
T
A
= 150°C
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.1
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Collector-Emitter Saturation Resistance
vs. Collector Current
Package Outline Dimensions
A
A1
D
b1
E
b2
e
DFN1006-3
Dim Min
Max Typ
A
0.47
0.53 0.50
A1
0
0.05 0.03
b1
0.10
0.20 0.15
b2
0.45
0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20
0.30 0.25
L2
0.20
0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
L2
L3
L1
DSS2540M
Document number: DS31820 Rev. 3 - 2
4 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS2540M
Suggested Pad Layout
C
X
1
X
G2
G1
Y
Z
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
DSS2540M
Document number: DS31820 Rev. 3 - 2
5 of 5
www.diodes.com
January 2011
© Diodes Incorporated
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