ZTX325STOA datasheet, PDF - EEWORLD Datasheet

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ZTX325STOA: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size68KB，2 Pages; ManufacturerDiodes Incorporated

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ZTX325STOA Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX325STOA Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	0.85 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1300 MHz

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NPN SILICON PLANAR

RF TRANSISTOR

ISSUE 2 MARCH 94

FEATURES

* High f

T

, 1.3GHz

* Low noise < 5dB at 500MHz

* Power output at 500MHz >175mW

ZTX325

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Mean Collector Current (Averaged over 100

µ

s)

Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

AV

I

CM

P

tot

T

j

:T

stg

30

15

2.5

25

50

350

E-Line

TO92 Compatible

VALUE

UNIT

V

mA

mW

°C

E

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Static Forward Current

Transfer Ratio

Transition Frequency

Capacitance, Collector

Depletion Layer

Capacitance, Emitter

Depletion Layer

Feedback Capacitance

Feedback Time Constant

SYMBOL

V

CEO(SUS)

V

(BR)EBO

I

CBO

I

CES

h

FE

f

T

C

TC

C

TE

-C

re

r

bb

C

b

c

2.0

3-161

0.85

12

25

20

1.0

1.3

1.5

2.0

MIN.

15

5

10

150

125

GHz

pF

ps

TYP.

MAX. UNIT

V

nA

µ

A

CONDITIONS.

I

C

=10mA, I

B

=0

I

E

=10

µ

A, I

C

=0

V

CB

=15V, I

E

=0

V

CE

=15V, V

BE

=0

I

C

=2mA, V

CE

=1V*

I

C

=25mA, V

CE

=1V*

I

C

=2mA, V

CE

=5V, f=400MHz

I

C

=25mA, V

CE

=5V, f=400MHz

V

CB

=10V, I

E

=I

e

=0, f=1MHz

VEB=0.5V, I

C

=I

c

=0, f=1MHz

V

CE

=5V, I

C

=2mA, f=1MHz

V

CB

=5V, -I

E

=2mA, f=10.7MHz

ZTX325STOA Related Products

	ZTX325STOA	ZTX325STOB
Description	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 COMPATIBLE, E-LINE PACKAGE-3	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Contacts	3	3
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.05 A	0.05 A
Collector-based maximum capacity	0.85 pF	0.85 pF
Collector-emitter maximum voltage	15 V	15 V
Configuration	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1300 MHz	1300 MHz

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