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ZTX754

Description
Small Signal Bipolar Transistor, 1A I(C), 125V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size78KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

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Small Signal Bipolar Transistor, 1A I(C), 125V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX754 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage125 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-W3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
ZTX754 Not Recommended for
New Design Please Use ZTX755
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
ZTX754
ZTX755
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX754
-125
-125
-5
-2
-1
1
E-Line
TO92 Compatible
ZTX755
-150
-150
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
50
50
20
30
20
3-263
ZTX754
MIN.
-125
-125
-5
-100
-100
-0.5
-0.5
-1.1
-1.0
50
50
20
30
20
MHz
pF
MAX.
ZTX755
MIN.
-150
-150
-5
-100
-100
-0.5
-0.5
-1.1
-1.0
MAX.
V
V
V
nA
nA
nA
V
V
V
V
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
V
CB
=-100V, I
E
=0
V
CB
=-125V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
I
C
=-500mA, I
B
=-50mA*
IC=-500mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
UNIT
CONDITIONS.
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
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