A Product Line of
Diodes Incorporated
ZXTN2040F
40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23
Features
•
•
•
•
•
•
•
BV
CEO
> 40V
I
C
= 1A Continuous Collector Current
Low Saturation Voltage V
CE(sat)
< 500mV @ 1A
Complementary Part Number ZXTP2041F
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT23
Case material: Molded Plastic. “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.008 grams (Approximate)
Description
This transistor combines high gain, high current operation and low
saturation voltage making it ideal for power MOSFET gate driving and
low loss power switching.
Applications
•
•
Power MOSFET date driving
Low loss power switching
SOT23
C
E
B
C
B
Top View
E
Device Symbol
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
ZXTN2040FTA
Notes:
Marking
N40
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N40
N40 = Product Type Marking Code
ZXTN2040F
Document number: DS33668 Rev. 3 - 2
1 of 6
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2040F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 5)
Peak Pulse Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Value
40
40
6
1
2
1
Unit
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition.
6. Same as Note 5, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
0.4
400
Max Power Dissipation (W)
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN2040F
Document number: DS33668 Rev. 3 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2040F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(base open) (Note 8)
Emitter-Base Breakdown Voltage
Collector-emitter cut-off current
Collector-base Cut-off Current
Emitter-base Cut-off Current
ON CHARACTERISTICS (Note 8)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CBO
I
EBO
Min
40
40
6
—
—
—
300
300
200
35
—
—
—
Typ
—
—
—
—
—
—
Max
—
—
—
100
100
100
—
900
—
—
200
300
500
1.1
1.0
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CE
= 30V
V
CB
= 30V
V
EB
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, V
CE
= 5V
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, f = 1MHz
Static Forward Current Transfer Ratio
h
FE
—
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS (Note 8)
Transition Frequency
Output Capacitance
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
—
—
—
mV
V
V
f
T
C
obo
150
—
—
—
—
10
MHz
pF
8. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
ZXTN2040F
Document number: DS33668 Rev. 3 - 2
3 of 6
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2040F
Typical Electrical Characteristics
ZXTN2040F
Document number: DS33668 Rev. 3 - 2
4 of 6
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2040F
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
D
J
F
G
L
M
K1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
X
E
ZXTN2040F
Document number: DS33668 Rev. 3 - 2
5 of 6
www.diodes.com
August 2012
© Diodes Incorporated
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