ZXTN25050DFH
50V, SOT23, NPN medium power transistor
Summary
BV
CEX
> 150V
BV
CEO
> 50V
BV
ECO
> 5V
I
C(cont)
= 4A
V
CE(sat)
< 60mV @ 1A
R
CE(sat)
= 40m
P
D
= 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
•
•
•
•
•
•
•
High power dissipation SOT23 package
High peak current
High gain
Low saturation voltage
150V forward blocking voltage
5V reverse blocking voltage
MOSFET gate drivers
Power switches
Motor control
DC fans
DC-DC converters
E
E
C
B
Pinout - top view
Applications
Ordering information
Device
ZXTN25050DFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per
reel
3,000
Device marking
017
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
1
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ZXTN25050DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(c)
Base current
Peak pulse current
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Power dissipation at T
amb
=25°C
(c)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
Operating and storage temperature range
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
P
D
Limit
150
150
50
5
7
4
1
10
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
- 55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
P
D
P
D
P
D
T
j
, T
stg
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTN25050DFH
Characteristics
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTN25050DFH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
150
150
50
5
5
7
Typ.
180
180
67
8
7.4
8.3
<1
-
<1
50
160
180
190
160
Base-emitter saturation
voltage
Base-emitter turn-on voltage
V
BE(sat)
V
BE(on)
300
240
20
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
(d)
t
(r)
t
(s)
t
(f)
970
870
450
410
40
200
12
65
111
429
140
300 s; duty cycle
2%.
Max.
Unit Conditions
V
V
V
V
V
V
I
C
= 100 A
I
C
= 100 A, R
BE
1k
-1V < V
BE
< 0.25V
I
C
= 10mA
(*)
I
E
= 100 A, R
BC
1k or
0.25V > V
BC
> -0.25V
I
E
= 100 A,
I
E
= 100 A
V
CB
= 150V
V
CB
= 150V, T
amb
= 100°C
V
CE
= 150V; R
BE
1k
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 3,5A, I
B
= 175mA
(*)
I
C
= 4A, I
B
= 400mA
(*)
I
C
= 4A, I
B
= 400mA
(*)
I
C
= 4A, V
CE
= 2V
(*)
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 4A, V
CE
= 2V
(*)
MHz I
C
= 50mA, V
CE
= 10V
f = 100MHz
or
or
Collector-base breakdown voltage BV
CBO
Collector-emitter breakdown
BV
CEX
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector cut-off current
Collector-emitter cut-off
current
Emitter cut-off current
Collector-emitter saturation
voltage
BV
CEO
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
50
20
100
50
60
260
250
235
210
1070
970
900
nA
A
nA
nA
mV
mV
mV
mV
mV
mV
mV
Static forward current transfer h
FE
ratio
20
pF
ns
ns
ns
ns
V
CB
= 10V, f = 1MHz
(*)
V
CC
= 10V. I
C
= 1A,
I
B1
= I
B2
= 10mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTN25050DFH
Typical characteristics
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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